2SA17H Datasheet and Replacement

Ordering number:EN3024PNP/NPN Epitaxial Planar Silicon Transistors2SA1704/2SC4484High-Current Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit:mm2064Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2SA1774/DPNP Silicon General Purpose2SA1774Amplifier TransistorThis PNP transistor is designed for general purpose amplifier applications. Thisdevice is housed in the SOT416/SC90 package which is designed for low powerPNP GENERALsurface mount applications, where board space is at a premium.PURPOSE AMPLIFIER

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time: tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -500 mA) High speed switching time: t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 5.5 pF (typ.) o

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mmPlasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: VCE (sat) = -0.5 V (max) Small collector output capacitance: Cob = 5.5 pF (typ.)

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -700 mA) High speed switching time: t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC

Ordering number:EN3133PNP Epitaxial Planar Silicon Transistor2SA1729High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1729] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vie

Ordering number:EN3481PNP Epitaxial Planar Silicon Transistor2SA1778VHF Converter, Local Oscillator ApplicationsFeatures Package Dimensions High power gain (PG=13dB typ ; f=0.4GHz).unit:mm High cutoff frequency (fT=1.2GHz typ).2018A Low Cob (Cob=1.0pF typ).[2SA1778] Complementary pair with the 2SC4269.C : CollectorB : BaseE : EmitterSANYO : CPSpecific

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

Ordering number:EN3182BPNP Epitaxial Planar Silicon Transistor2SA1766High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High DC current gain (hFE=500 to 1200).2038 Large current capacity.[2SA1766] Low collector-to-emitter saturation voltage. High VEBO.E : EmitterC : Collec

Ordering number:EN3643PNP/NPN Epitaxial Planar Silicon Transistors2SA1749/2SC4564High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 200V min.2042A High current.[2SA1749/2SC4564] Small reverse transfer capacitance and excellent highfrequnecy chacateristics :Cre=

Ordering number:ENN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064A Fast switching speed.[2SA1709/2SC4489]2.51.456.9 1.00.60.9 0.51 2 30.451 : Base2 : Collector( ) 2SA17093 :

Ordering number:EN3709PNP Epitaxial Planar Silicon Transistors2SA179820V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT processes.unit:mm Low saturation voltage.2042A Fast switching speed.[2SA1798] Large current capacity.B : BaseC : CollectorE : EmitterSANYO : TO-126MLSpecificationsAbsolute Maximum Ratings at Ta = 25CParam

Ordering number:ENN3025PNP/NPN Epitaxial Planar Silicon Transistors2SA1705/2SC4485Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064AFeatures [2SA1705/2SC4485]2.5 Adoption of FBET process.1.45 Fast switching speed.6.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector(

Ordering number : EN3094A2SA1708 / 2SC4488SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1708 / 2SC4488High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed.Specifications ( ) : 2SA1708Absolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number:EN3134PNP Epitaxial Planar Silicon Transistor2SA1730High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET , MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SA1730] Fast switching speed. Small-sized package.E : EmitterC : CollectorB : BaseSANYO : PCP(Bottom vi

Ordering number:ENN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064A[2SA1770/2SC4614]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector( ) : 2SA17703 : Base2.54 2.54Specificat

Ordering number:ENN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064AFeatures [2SA1768/2SC4612]2.5 Adoption of MBIT process.1.45 High breakdown voltage, large current capacity.6.9 1.0 Fast switching speed.0.60.9 0.51

Ordering number:EN3136PNP Epitaxial Planar Silicon Transistor2SA1732High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1732] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1732]1

Ordering number:EN3135APNP Epitaxial Planar Silicon Transistor2SA1731High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2045B Low collector-to-emitter saturation voltage.[2SA1731] Fast switching speed.1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1

Ordering number:EN3159APNP Epitaxial Planar Silicon Transistor2SA1724High-Definiton CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=1.5GHz typ).unit:mm High current (IC=300mA).2038A Adoption of FBET process.[2SA1724]1 : Base2 : Collector3 : EmitterMarking : AJ(Bottom view)SpecificationsSANYO : PCPAbsolute Maximum

Ordering number:EN2974APNP Epitaxial Planar Silicon Transistor2SA1700High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2045B Excellent hFE linearity.[2SA1700]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SA1700]1 : Base2 : Collector3 : Emitter4 : Collecto

Ordering number:EN3091PNP Epitaxial Planar Silicon Transistor2SA1702High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Low saturation votlage.2064 Large current capacity.[2SA1702] Fast switching speed.E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:ENN3026APNP/NPN Epitaxial Planar Silicon Transistors2SA1706/2SC4486High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064AFeatures [2SA1706/2SC4486]2.5 Adoption of FBET, MBIT processes.1.45 Large current capacity and wide ASO.6.9 1.0 Fast switching speed.0.60.9 0.5

Ordering number:ENN3093PNP/NPN Epitaxial Planar Silicon Transistors2SA1707/2SC4487High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity, wide ASO.2064A Low collector-to-emitter saturation voltage.[2SA1707/2SC4487] Fast switching speed.2.51.456.9 1.00.60.9 0.51 2 30.451 : Em

Ordering number:EN4668PNP Epitaxial Planar Silicon Transistors2SA1723High-Frequency Amplifier, Medium-PowerAmplifier ApplicationsApplications Package Dimensions Wideband amplifiers.unit:mm High-frequency drivers.2009B[2SA1723]Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process.1 : Emitter2 : Collector3 : BaseJEDE

Ordering number:EN3023PNP/NPN Epitaxial Planar Silicon Transistor2SA1703/2SC4483Low-Frequency Amplifier,Electronic Governor ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm2064[2SA1703/2SC4483]E : EmitterC : CollectorB : Base( ) : 2SA1703SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

Ordering number:EN3132PNP Epitaxial Planar Silicon Transistor2SA1728High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Low collector-to-emitter saturation voltage.2018A Fast switching speed.[2SA1728] Small-sized package.C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta =

Ordering number:EN3022PNP/NPN Epitaxial Planar Silicon Transistors2SA1701/2SC4481Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor driver applications.2064[2SA1701/2SC4481]Features Large current capacity. Low collector-to-emitter saturation voltage.E : Emitt

Ordering number:EN3180BPNP Epitaxial Planar Silicon Transistor2SA1764High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2018A High gain-bandwidth product.[2SA1764] Small collector capacitacne. Small-sized package permitting the 2SA1764-appliedsets to be made small and slim. Comp

Ordering number:EN3181APNP Epitaxial Planar Silicon Transistor2SA1765High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2033 High gain-bandwidth product.[2SA1765] Small collector capacitance. Complementary pair with the 2SC4454.B : BaseC : CollectorE : EmitterSANYO : SPASpeci

Ordering number:EN3179APNP Epitaxial Planar Silicon Transistor2SA1763High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2059 High gain-bandwidth product.[2SA1763] Small collector capacitance. Very small-sized package permitting the 2SA1763-applied sets to be made small and slim.

DATA SHEETSILICON POWER TRANSISTOR2SA1742PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATIONswitching and features a high hFE at low VCE(sat). This transistor is idealPart No. Packagefor use as a driver in DC/DC converters and actuators.2SA1742 Isolated TO-220In addition, a small resin-molded

DATA SHEETDARLINGTON POWER TRANSISTOR2SA1720PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATIONThis transistor is ideal for high-precision control such as PWMPart No. Packagecontrol for pulse motors or brushless motors in OA and FA equipment.2SA1720 Isolated TO-220FEATUR

DATA SHEETSILICON POWER TRANSISTOR2SA1744PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at Low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

DATA SHEETSILICON TRANSISTOR2SA1714PNP SILICON EPITAXIAL POWER TRANSISTOR(DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm)transistor is ideal for high-precision control such as PWM control forpulse mortors or blushless mortor of OA and FA equipment.FEATURES High DC current amplifiers due

DATA SHEETSILICON POWER TRANSISTOR2SA1741PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

DATA SHEETSILICON POWER TRANSISTOR2SA1743PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm)switching and features a high hFE at low VCE(sat). This transistor isideal for use as a driver in DC/DC converters and actuators.In addition, a small resin-molded insulation type packagecontributes

2SA1759TransistorsTransistors2SC4505 / 2SC4620(96-97-A324)(96-178-C300)305

TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_

2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO -50 VCollector-emitter voltage

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

General Purpose Transistor (50V, 0.15A) 2SA1774EB Applications Dimensions (Unit : mm) General purpose small signal amplifier. EMT3FFeatures 1) Excellent hFE linearity. 1.6 0.72) Complements the 2SC4617EB. 0.26(3)Structure PNP silicon epitaxial. planar transistor. (1) (2)0.130.5 0.51.0Each lead has same dimensions(1) Base(2) Emitter Abbreviate

2SA1759 Transistors High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A) 2SA1759 Dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -400V) MPT32) Low saturation voltage, 4.51.5typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA. 1.63) High switching speed, typically tf = 1s at Ic =100mA. 4) Wide SOA

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AKDatasheetPNP -150mA -50V General Purpose TransistorsAEC-Q101 QualifiedOutline VMT3 EMT3FParameter ValueCollectorCollectorVCEO50VBaseBaseIC150mAEmitterEmitter2SA2029 2SA1774EB2SA2029FHA(SC-105AA) (SC-89)F

Power Transistor (-50V, -3A) 2SA1797 Features Dimensions (Unit : mm) 1) Low saturation voltage. MPT3VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. 4.51.51.63) Complements the 2SC4672. (1) (2) (3) Packaging specifications 0.40.50.4 0.4Type 2SA17971.5 1.53.0(1)BasePackage MPT3(2)CollectorhFE PQ(3)Emi

2SA1774-Q/2SA1774-R/2SA1774-SFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junctio

MCC2SA1774-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1774-RCA 91311Phone: (818) 701-49332SA1774-SFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meet

MCC2SA1774-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1774-RCA 91311Phone: (818) 701-49332SA1774-SFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meet

MCC2SA1774-QMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1774-RCA 91311Phone: (818) 701-49332SA1774-SFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meet

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mountwww.onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

Ordering number : EN3094B2SA1708/2SC4488Bipolar Transistorhttp://onsemi.com( ) ( ) ( ) ( )- 100V, - 1A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1708SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Ba

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

Ordering number : EN3582A2SA1768Bipolar Transistorhttp://onsemi.com ( )180V, 160A, Low VCE sat PNP Single NMPApplicaitons Color TV sound output, converter, inverterFeatures Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

2SA1774G, S2SA1774GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.Features Reduces Board Space High hFE, 210-460 (typical)SC-75

Ordering number : EN3093A2SA1707/2SC4487Bipolar Transistorhttp://onsemi.com(-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed( )2SA1707SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

Ordering number : EN3026B2SA1706Bipolar Transistorhttp://onsemi.com ( )50V, 2A, Low VCE sat , PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Large current capacity and wide ASO Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Rating

Ordering number : EN3096A2SA1709/2SC4489Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1709SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

Ordering number : EN3025A2SA1705Bipolar Transistorhttp://onsemi.com( )-50V, -1A, Low VCE sat , PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET process Fast switching speedSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO --60 VCollecto

Ordering number : EN3578A2SA1770/2SC4614Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of MBIT process High breakdown voltage and large current capacity( )2SA1770SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO (--)180 VC

2SA1774PNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416/SC-90package which is designed for low power surface mounthttp://onsemi.comapplications, where board space is at a premium.FeaturesCOLLECTOR Reduces Board Space 3 High hFE, 210-460 (typical) L

Transistor2SA1791Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46561.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Ma

Transistor2SA1790Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46261.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.SS-Mini type package, allowing downsizing of the equipment 1and automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Transistor2SA1748Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC45622.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

Transistor2SA1791Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46561.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.Small collector output capacitance Cob. 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Ma

Transistor2SA1790Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC46261.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.SS-Mini type package, allowing downsizing of the equipment 1and automatic insertion through the tape packing and the maga-3zine packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati

Transistor2SA1767Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC1473A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitt

Transistor2SA1739Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switch (pair with 2SC3938)1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Rati

Transistor2SA1748Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC45622.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute

Transistor2SA1762Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC46066.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol

Transistor2SA1737Silicon PNP epitaxial planer typeFor video amplifierUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-0.4 0.080.4 0.04zine packing.0.5 0.081.5 0.1

Transistor2SA1762Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC46066.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol

Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2

Transistor2SA1738Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High-speed switch (pair with 2SC3757)Low collector to emitter saturation voltage VCE(sat).1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine 3packing.2

Transistor2SA1767Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC1473A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitt

UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R SOT-23 E B C Tape Reel2SA1774L-x-AN3-R 2SA1774G-x-AN3-R SOT-523 E B C

UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T TO-251 B C E Tube2SA1700L-x-TN3-R 2SA1700G-x-TN3-R TO-252 B C E Tape Ree

UNISONIC TECHNOLOGIES CO., LTD 2SA1740 PNP SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1740L-x-AB3-R 2SA1740G-x-AB3-R SOT-89 B C E Tape Reelwww.unisonic.com.tw 1 of 5 Copyright 2013 Unisonic Techno

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SA1797G-x-AA3-R SOT-223 B C E Tape Reel- 2SA1797G-x-AB3-R SOT-8

2SA1774 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-523 Low COB. COB=4.0pF Complements the 2SC4617 AM 33Top View C BCLASSIFICATION OF hFE 11 2L 2Product-Rank 2SA1774-Q 2SA1774-R 2SA1774-S KERange 120~270 180~390 270~560 DMarki

2SA1797 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High transition frequency High power dissipation 123APACKAGE DIMENSIONS ECB D1F G2H K3J L1. Base2. CollectorMillimeter Millimeter REF. REF. 3. EmitterMin. Max. Min. Max. A 4.40

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate TransistorsSOT-523 2SA1774 TRANSISTOR (PNP)FEATURES Reduces Board Space High hFE1. BASE Low VCE(sat) 2. EMTTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1740 TRANSISTOR (PNP) 1. BASE FEATURES High breadown voltage 2. COLLECTOR Excellent hFE linearlity 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1797 TRANSISTOR (PNP) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR 1 Excellent DC current gain characteristics 2 Complements to 2SC4672 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION With TO-220F package Complement to type 2SC4511 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

JMnic Product Specification Silicon PNP Power Transistors 2SA1788 DESCRIPTION With TO-247 package Complement to type 2SC4652 APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitt

JMnic Product Specification Silicon PNP Power Transistors 2SA1718 DESCRIPTION With TO-220F package High DC current gain. Low collector saturation voltage. DARLINGTON APPLICATIONS Ideal for motor drviers and solenoid drivers application PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings

JMnic Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION With TO-220Fa package Low collector saturation voltage Wide area of safe operation APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SA1771 DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching time APPLICATIONS High current switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX U

JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION With TO-220C package Complement to type 2SC4512 APPLICATIONS Audio and General Purpose PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA1741 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SA1789 DESCRIPTION With TO-247 package Complement to type 2SC4653 Low collector saturation voltage APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon PNP Power Transistors 2SA1757 DESCRIPTION With TO-220Fa package Low saturation voltage Wide area of safe operation APPLICATIONS For switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -1

JMnic Product Specification Silicon PNP Power Transistors 2SA1746 DESCRIPTION With TO-3PML package Low collector saturation voltage APPLICATIONS For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER COND

2SA1725Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511)Application : Audio and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings UnitSymbol Conditions Ratings Unit0.24.20.210.1c0.5VCBO 80 V VCB=80V 10max A 2.8ICBOVCEO 80 VIEBO VEB=6V 10

2SA1726Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512)Application : Audio and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SA1726 Symbol Conditions 2SA1726 UnitUnit0.24.80.210.20.12.0VCBO 80 ICBO VCB=80V 10max AVVCEO 80 IEBO VEB=6V 10m

LOW VCE (sat) 2SA1746Silicon PNP Epitaxial Planar TransistorApplication : Chopper Regulator, Switch and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 70 V ICBO VCB=70V 10max AVCEO 50 V IEBO VEB=6V

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1795 Case : E-pack(TE5T4)Unit : mm-5A PNPRATINGS

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1796 Case : E-pack(TE7T4)Unit : mm-7A PNPRATINGS

2SA1797SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B1 4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53 Low saturation voltage 0.400.480.442x)0.13 B0.35 0.37 Excellent DC current gain characteristics 1.53.0 Complements to 2SC4672 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless other

2SA1774SOT-523 Transistor(PNP)SOT-5231. BASE 2. EMTTER 3. COLLECTOR Features Reduces Board Space High hFE 120560 Low VCE(sat)

2SA1700(PNP)TO-251/TO-252-2L Transistor TO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Coll

2SA1740SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 4.6B4.41.61 1.81.41.43. EMITTER 2 2.64.253 2.43.75Features 0.8MIN0.530.40 0.48High breadown voltage 0.442x)0.13 B0.35 0.371.5 Excellent hFE linearlity 3.0Dimensions in inches and (millimeters)Marking: AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Param

2SA1774PNP 3312SC-89(SOT-523F)WEITRONhttp://www.weitron.com.tw2SA1774ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current Gain--hFE 120560(IC=-1 mAdc, VCE=-6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- -0.5 (IC=-50 mAdc, IB=-5mAdc)Output Capacitanc

WILLAS2SA1797SOT-89 Plastic-Encapsulate TransistorsTRANSISTOR (PNP)FEATURES SOT-89 Low saturation voltage Excellent DC current gain characteristics 1. BASEPb-Free package is available RoHS product for packing code suffix "G" 2. COLLECTOR 1Halogen free product for packing code suffix "H" 23. EMITTER3MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parame

2SA1797 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SC4672 Low saturation voltage, excellent DC current gain characteristics, complements the 2SC4672. / Applications

SMD Type TransistorsPNP Transistors2SA17291.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage.0.42 0.10.46 0.1 Fast switching speed. Small-sized package.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

SMD Type TransistorsPNP Transistors2SA1778SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V1 2+0.10.95-0.1 0.1+0.05-0.01 Complementary to 2SC4269+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA17361.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45411.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsPNP Transistors2SA17661.70 0.1 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity.0.42 0.10.46 0.1 Low collector-to-emitter saturation voltage. High VEBO.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base

SMD Type TransistorsPNP Transistors2SA17301.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.0.42 0.10.46 0.1 Small-sized package.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

SMD Type TransistorsPNP Transistors2SA1774SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Reduces Board Space High hFE Low VCE(sat)30.30.050.5+0.1-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - E

SMD Type TransistorsPNP Transistors2SA1724SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.3A Collector Emitter Voltage VCEO=-20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

SMD Type TransistorsPNP Transistors2SA1735 Features 1.70 0.1 Low saturation voltage High speed switching time Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) 0.42 0.10.46 0.1 Complementary to 2SC45401.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsPNP Transistors2SA1745 Features Low collector-to-emitter saturation voltage. Complementary to 2SC45551.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5

SMD Type TransistorsPNP Transistors2SA1759SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-400V High switching speed Complements to 2SC45050.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Coll

SMD Type TransistorsPNP Transistors2SA1721SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-300V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC4497 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

SMD Type TransistorsPNP Transistors2SA17341.70 0.1 Features Low saturation voltage High speed switching time0.42 0.10.46 0.1 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC45391.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsPower Transistor2SA1797SOT-89 Unit: mm+0.14.50-0.1 1.50+0.1-0.11.80+0.1-0.1FeaturesLow saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.0.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.1Excellent DC current gain characteristics.Complements the 2SA1797 and 2SC4672.1. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta

SMD Type TransistorsPNP Transistors2SA1748 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SC4562.1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collect

SMD Type TransistorsPNP Transistors2SA1728SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-40V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Coll

SMD Type TransistorsPNP Transistors2SA1740SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-400V Complementary to 2SC45480.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage V

SMD Type TransistorsPNP Transistors2SA1797 Features1.70 0.1 Low saturation voltage Excellent DC current gain characteristics Complements to 2SC46720.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Vol

SMD Type TransistorsPNP Transistors2SA1764SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-200mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC4453 +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

SMD Type TransistorsPNP Transistors2SA1738SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95-0.1 0.1-0.01+0.1 Complementary to 2SC37571.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPower Transistor2SA1797SOT-89 Unit: mm+0.14.50-0.1 1.50+0.1-0.11.80+0.1-0.1FeaturesLow saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.0.48+0.1 0.53+0.1 0.44+0.1-0.1 -0.1 -0.1Excellent DC current gain characteristics.Complements the 2SA1797 and 2SC4672.1. Base3.00+0.1-0.12. Collector3. EmiitterAbsolute Maximum Ratings Ta

CHENMKO ENTERPRISE CO.,LTD2SA1774GPSURFACE MOUNT General Purpose PNP Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Power Amplifier .FEATURESC-75/SOT-416* Surface mount package. (SC-75/SOT-416)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Collector power dissipation).0.10.20.050.51.00.1 1.6

2SA1703(3CA1703) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency amplifier, electronic governor applications. Features: Low V . CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V E

2SA1797PNP Transistors Features3 Low saturation voltage Excellent DC current gain characteristics2 Complements to 2SC46721.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6

DATA SHEET 2SA1797 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -50 V CURRENT -3 A FEATURES LOW SATURATION VOLTAGE: VCE(SAT)= -0.35V@IC/IB= -1A/-50mA EXCELLENT DC CURRENT GAIN PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS LEAD FREE AND HALOGEN-FREE E MECHANICAL DATA C B CASE: SOT-89 PACKAGE TERMINALS: SOLDERABLE PER MIL-ST

2SA1746T5TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -50 VCEOV Emi

2SA1744T2TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a high h at low V ,which

2SA1774 2SA1774Q / 2SA1774R / 2SA1774S SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Low Cob = 3.5pF (Typical) Low Vce(sat)

Plastic-Encapsulate TransistorsFEATURES2SA1797 (PNP) Low saturation voltage Excellent DC current gain characteristics Complements to 2SC4672Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 V1. BASEEmitter-Base Voltage VEBO -6 V2. COLLECTO SOT-89Collector Current -Contin

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor2SA1742DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEOHigh DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and feat

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1746DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-E

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BAPPLICATIONSThis type of power transistor is developed for high-speedswitching and f

isc Silicon PNP Power Transistor 2SA1725DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedComplement to Type 2SC4511Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1742DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEOHigh DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power trans

isc Silicon PNP Power Transistor 2SA1788DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

isc Silicon PNP Power Transistor 2SA1718DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon PNP Power Transistor 2SA1758DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = -2V, I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching

isc Silicon PNP Power Transistor 2SA1771DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2SA1700DESCRIPTIONHigh breakdown voltageLow Collector-Emitter Saturation VoltageHigh Power Dissipation-: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1744DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

isc Silicon PNP Power Transistor 2SA1726DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedComplement to Type 2SC4512Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1741DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

isc Silicon PNP Power Transistor 2SA1789DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -60V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

isc Silicon PNP Power Transistor 2SA1757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Switching SpeedLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicat

isc Silicon PNP Power Transistor 2SA1773DESCRIPTIONHigh breakdown voltage:V >-400V @I =-1mA(BR)CEO CLarge current capacityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -400 VCBO

isc Silicon PNP Power Transistor 2SA1746DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for chopper regulator, switch and generalpurpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN