Справочник транзисторов. 2SA1801

 

Биполярный транзистор 2SA1801 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1801
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 8 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 5.5 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: ISO126

 Аналоги (замена) для 2SA1801

 

 

2SA1801 Datasheet (PDF)

 ..1. Size:122K  toshiba
2sa1801.pdf

2SA1801
2SA1801

 8.1. Size:178K  toshiba
2sa1803.pdf

2SA1801
2SA1801

 8.2. Size:89K  toshiba
2sa1802.pdf

2SA1801
2SA1801

2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage : V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C

 8.3. Size:177K  toshiba
2sa1804.pdf

2SA1801
2SA1801

 8.4. Size:176K  toshiba
2sa1805.pdf

2SA1801
2SA1801

 8.5. Size:56K  rohm
2sa1807 2sa1862.pdf

2SA1801
2SA1801

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

 8.6. Size:43K  rohm
2sa1807.pdf

2SA1801

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307

 8.7. Size:40K  panasonic
2sa1806.pdf

2SA1801
2SA1801

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Pa

 8.8. Size:44K  panasonic
2sa1806 e.pdf

2SA1801
2SA1801

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Pa

 8.9. Size:263K  jmnic
2sa1803.pdf

2SA1801
2SA1801

JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PFM package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute

 8.10. Size:243K  jmnic
2sa1804.pdf

2SA1801
2SA1801

JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PFM package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute ma

 8.11. Size:211K  jmnic
2sa1805.pdf

2SA1801
2SA1801

JMnic Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PFM package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute

 8.12. Size:163K  inchange semiconductor
2sa1803.pdf

2SA1801
2SA1801

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PML package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

 8.13. Size:216K  inchange semiconductor
2sa1804.pdf

2SA1801
2SA1801

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PML package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

 8.14. Size:203K  inchange semiconductor
2sa1805.pdf

2SA1801
2SA1801

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PML package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N328A | DTD143EC | MT3S03AU

 

 
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