2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -50 V High current: I = -150 mA (max) C High h : h = 120 to 400 FE FE Excellent h linearity FE: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum

2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) at IC = -5 A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -7 VColle

2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 120~400 Complementary to 2SC4738F Small package Ma

2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = -50 V, I = -150 mA (max) CEO C High h FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2SC4944 Maximum R

2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage : V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum

2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 70 MHz (typ.) Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-emitter voltage VCEO -230 VEmitter-base vo

Ordering number:EN4720 PNP Epitaxial Planar Silicon Transistor2SA1865Muting Circuits, Driver ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=10k , R2=10k ).unit:mm Very small-sized package making 2SA1865-applied2106Asets to small and slim.[2SA1865] Small ON resistance. High gain-bandwidth product fT.1 : Base2 : Emitter3 : Collec

Ordering number:4718APNP Epitaxial Planar Silicon Transistor2SA1896DC/DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET processes.unit:mm Large current capacity.2038A Low collector-to-emitter saturation voltage.[2SA1896] Small size making it easy to provide high-density,small-sized hybrid ICs.1 : Base2 : Collector3 : Em

Ordering number : ENN5495A2SA1852 / 2SC4826PNP / NPN Epitaxial Planar Silicon Transistors2SA1852 / 2SC4826High Definition CRT DisplayVideo Output ApplicationsApplicationsPackage Dimensions High definition CRT display video output,unit : mmwide-band amplifer.2084B[2SA1852 / 2SC4826]Features 4.51.9 2.610.51.2 1.4 Adoption of FBET process. High fT : fT=

Ordering number:EN3973PNP Epitaxial Planar Silicon Transistor2SA1814Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1814-unit:mmapplied sets to be made smaller and slimmer.2018B Adoption of FBET process.[2SA1814] High DC current gain (hFE=500 to 1200). Low collector

Ordering number:EN4665PNP Epitaxial Planar Silicon Transistor2SA1838Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1838-unit:mmapplied sets to be made small and slim.2059A Small output capacitance.[2SA1838] Low collector-to-emitter saturation voltage. Low ON resistance.1 : Base2 : Emitter3 : CollectorSANY

Ordering number:EN4719PNP Epitaxial Planar Silicon Transistor2SA1864Muting Circuits, Driver ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=4.7k, R2=4.7k).unit:mm Very small-sized package making 2SA1864-applied2106Asets small and slim.[2SA1864] High gain-bandwidth product fT.1 : Base2 : Emitter3 : CollectorSANYO : SMCPSpecificati

Ordering number:EN4133PNP Epitaxial Planar Silicon Transistor2SA185420V/5A Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2084BFeatures [2SA1854] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Large current capacity. Fast switching sp

Ordering number:4660APNP Epitaxial Planar Silicon Transistor2SA1883High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturatio voltage.2106A High gain-bandwidth product.[2SA1883] Small collector capacitance. Very small-sized package permitting 2SA1883-applied sets to be made small and slim. Compl

Ordering number:EN4666PNP Epitaxial Planar Silicon Transistor2SA1839Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1839-unit:mmapplied sets to be made small and slim.2018B Small output capacitance.[2SA1839] Low collector-to-emitter saturation voltage. Low ON resistance.1 : Base2 :Emitter3 : CollectorSANYO

Ordering number:EN3686APNPTriple Diffused Planar Silicon Transistors2SA1831High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=800V).unit:mm Small Cob (Cob typ=1.6pF).2010B High reliabirity (Adoption of HVP processes).[2SA1831]JEDEC : TO-220AB E : EmitterEIAJ : SC-46 C : CollectorB : Base

Ordering number:EN3870PNP Epitaxial Planar Silicon Transistor2SA182320V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2084 Fast swicthing speed.[2SA1823] Large current capacity. It is possible to make appliances more compactbecause its height on board is 9.5mm. Meets radial taping.E

Ordering number:EN4644PNP Epitaxial Planar Silicon Transistor2SA1857FM, RF, MIX, IF Amplifier High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB typ (f=100MHz).unit:mm High cutoff frequency : fT=750MHz typ.2059A Low collector-to-emitter saturation voltage.[2SA1857] Complementary pair with the 2SC4400.1

Ordering number:5049PNP Epitaxial Planar Silicon Transistor2SA1898DC/DC Converter ApplicationApplications Package Dimensions High-speed switching. unit:mm2038AFeatures [2SA1898] Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed.1 : Base2 : Collector3 :EmitterSANYO : PCP(Bo

Ordering number:EN4625PNP Epitaxial Planar Silicon Transistor2SA1815FM, RF, MIX, IF Amplifier, High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB (f=100MHz).unit:mm High cutoff frequency ; fT=750MHz typ.2018A Low collector-to-emitter saturation voltage.[2SA1815] Complementary pair with the 2SC4432.C : C

Ordering number : ENN5507B2SA1875 / 2SC4976PNP / NPN Epitaxial Planar Silicon Transistors2SA1875 / 2SC4976High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO200V(min). 2045B Large current capacitance.[2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle

Ordering number:4721PNP Epitaxial Planar Silicon Transistor2SA1866Muting Circuits, Driver ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=47k , R2=47k ).unit:mm Very small-sized package making 2SA1866-applied2106Asets small and slim.[2SA1866] Small ON resistance. High gain-bandwidth product fT.1 : Base2 : Emitter3 : CollectorS

Ordering number:EN3972PNP Epitaxial Planar Silicon Transistor2SA1813Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1813-unit:mmapplied sets to be made smaller and slimmer.2059A Adoption of FBET process.[2SA1813] High DC current gain (hFE=500 to 1200). Low collector

DATA SHEETPNP SILICON EPITAXIAL TRANSISTOR2SA1836PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.10 0.05FEATURES High DC current gain: hFE2 = 200 TYP. 30 to 0.1 High voltage: VCEO = -50 V Can be automatically mounted 2 10.2+0.10ORDERING INFORMATION 0.6

DATA SHEETSILICON POWER TRANSISTOR2SA1847PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).This transistor is ideal for use as a driver in DC/DC converters and actuators.In addition, this transistor features a package that can be auto-mounted in radial taping specific

DATA SHEETDARLINGTON POWER TRANSISTOR2SA1840PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control suchas PWM control for pulse motors or brushless motors in OA and FA equipment.In addition, this transistor features a package that can be auto-mounte

DATA SHEETSILICON POWER TRANSISTOR2SA1843PNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).This transistor is ideal for use as a driver in DC/DC converters and actuators.In addition, this transistor features a package that can be auto-mounted in radial taping sp

DATA SHEETSILICON TRANSISTOR2SA1897PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT: mm)for high current control in small dimension. This transistor is idealfor high efficiency DC/DC converters due to fast switching speed.FEATURES High current capaci

DATA SHEETSILICON POWER TRANSISTOR2SA1845PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).This transistor is ideal for use as a driver in DC/DC converters and actuators.In addition, this transistor features a package that can be auto-mounted in radial taping specific

DATA SHEETDARLINGTON POWER TRANSISTOR2SA1841PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SA1841 MP-10 control for pulse motors brushless motors in OA and FA

DATA SHEETSILICON TRANSISTOR2SA1871PNP SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching and is ideal for use in switching elements suchas switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of small signal

2SA1862 Transistors High-voltage Switching Transistor (-400V, -2A) 2SA1862 External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -400V) 6.5CPT35.12.32) Low saturation voltage. 0.5 (Max. VCE (sat) = -0.5V at IC / IB = -500mA / -100mA) 3) High switching speed, typically tf = 0.4s at IC = -1A. 4) Wide SOA (safe operating area). 0.75 Ab

2SA1834TransistorsTransistors2SC5001(96-106-B217)(96-193-D217)292Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SA1834 Transistors Low VCE(sat) Transistor (Strobe flash) (-20V, -10A) 2SA1834 External dimentions (Unit : mm) Features 1) Low saturation voltage, CPT36.55.1typically VCE(sat) = -0.16V at IC / IB= -4A / -50mA. 2.30.52) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SC5001. 0.75 Packaging specif

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SA1812 / 2SA1727 / 2SA1776TransistorsHigh-voltage Switching Transistor( 400V, 0.5A)2SA1812 / 2SA1727 / 2SA1776 Features1) High breakdown voltage, BVCEO= 400V.2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.3) High switching speed, typically tf : 1 s at IC = 100mA.4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C)Paramete

Transistors 2SA1812 / 2SA1727 / 2SA1776(96-609-A313)320

2SA1807TransistorsTransistors2SA1862(96-102-A331)(96-109-A343)307

Transistors 2SA1870(96-113-A325)308

MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-

MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-

Transistor2SA1890Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC50261.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazi

Transistor2SA1858Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.15 +0.150.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitter to base vol

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Pa

Transistor2SA1806Silicon PNP epitaxial planer typeFor high speed switchingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat). 1SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing and the maga-zine packing.2Absolute Maximum Ratings (Ta=25C)Pa

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5

Transistor2SA1890Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC50261.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.45Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazi

Transistor2SA1858Silicon PNP epitaxial planer typeFor general amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 300 V+0.15 +0.150.45 0.1 0.45 0.1Collector to emitter voltage VCEO 300 V1.27 1.27Emitter to base vol

Transistor2SA1816(Tentative)Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 150 VCollector to emitter voltage VCEO 150 VEmitter to base voltage VEBO 5

UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 32SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube

2SA1810Silicon PNP EpitaxialApplicationHigh frequency amplifierFeatures Excellent high frequency characteristicsfT = 300 MHz typ High voltage and low output capacitanceVCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifierOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SA1810Absolute Maximum Ratings (Ta = 25C)Item Symbol Ra

2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 33Top View C BCLASSIFICATION OF hFE 11 2L 2Product-Rank 2SA1832-Y 2SA1832-GR KE

JMnic Product Specification Silicon PNP Power Transistors 2SA1878 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PFM package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute

JMnic Product Specification Silicon PNP Power Transistors 2SA1887 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -80 V VCEO Coll

JMnic Product Specification Silicon PNP Power Transistors 2SA1860 DESCRIPTION With TO-3PML package Complement to type 2SC4886 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION With TO-220F package Complement to type 2SC4883/4883A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARA

JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PFM package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute ma

JMnic Product Specification Silicon PNP Power Transistors 2SA1880 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1837 DESCRIPTION With TO-220F package Complement to type 2SC4793 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SA1869 DESCRIPTION With TO-220F package Complement to type 2SC4935 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter

JMnic Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PFM package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PFM) and symbol 3 EmitterAbsolute

JMnic Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

LAPT 2SA1860Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF)(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 150 V ICBO VCB=150V 100max AVCEO 150 V IEBO VEB=

2SA1859/1859ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A)Application : Audio Output Driver and TV Velocity-modulation(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsExternal Dimensions FM20(TO220F)RatingsRatingsSymbol UnitSymbol Conditions Unit2SA1859 2SA1859A2SA1859 2SA1859A0.24.20.210.1c0.52.8VCBO 15

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1876 Case : E-pack(TE3T8)Unit : mm-3A PNPRATINGS

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1880 Case : ITO-220Unit : mm(TP10T8)-10A PNPRATINGS

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1877 Case : E-pack Unit : mm(TE5T8)-5A PNPRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO -80 VCollector to Emitter Voltage VCEO -80 VEmitter to Base Voltage VEBO -7 VCollector

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1879 Case : ITO-220Unit : mm(TP7T8)-7A PNPRATINGS

2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features SOT-353 Small package (dual type) High voltage and high current High hFE Excellent hFE linearity 1 Complementary to 2SC4944 MARKING: SY SGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -50 VCollector-Base Voltage VCEO -50 VCollector-Emitter Voltage VEBO Emitter-Base Volta

2SA1832PNP TRANSISTOR3P b Lead(Pb)-Free12FEATURES:* High voltage and high current* Excellent hFE linearitySOT-523(SC-75)* Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBOCollector-Base Voltage -50 V VCEOCollector-Emitter Voltage -50 V VEBOEmitter-Base Voltage -5 V ICCollector Current Continuous

PNP PNP Epitaxial Silicon Transistor R 2SA1837 APPLICATIONS Power Amplifier Applications FEATURES V =-230V (min) High collector voltage V =-230V (min) CEOCEO 2SC4793 Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) f T=70MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Marking Ha

RoHS RoHS 2SA1837AFSEMICONDUCTORNell High Power ProductsHigh Frequency PNP Power Transistor-1A/-230V/20WFEATURESHigh transition frequency:fT = 70MHz (typ.)Complementary to 2SC4793AFBCTO-220F package which can be Einstalled to the heat sink with one screwTO-220F (2SA1837AF) APPLICATIONSPower amplifier(2)CDriver stage amplifier B(1)PNPE(3)ABSO

SMD Type TransistorsPNP Transistors2SA1832SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features High voltage and high current Excellent hFE linearity3 Complementary to 2SC47380.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

SMD Type TransistorsPNP Transistors2SA1881SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-1A1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SC49831.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SA1896SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

SMD Type TransistorsPNP Transistors2SA18121.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf :1us at IC =-100mA.0.42 0.10.46 0.1 High-voltage Switching Transistor1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V

SMD Type TransistorsPNP Transistors2SA1875TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High fT : fT=400MHz(typ). High breakdown voltage0.127+0.1 Large current capacitance.0.80-0.1max Complements to 2SC4976+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

SMD Type TransistorsPNP Transistors2SA1890 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

SMD Type TransistorsPNP Transistors2SA1839SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.1 Features 3 Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

DIP Type TransistorsTransistorsPNP Transistors2SA1837TO-220MF Units:mm Features High collector voltageVCEO=-230V (min) Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -230 Collector - Emitter Voltage VCEO -230 V Emit

SMD Type TransistorsPNP Transistors2SA18981.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage.0.42 0.10.46 0.1 Fast switching speed.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base

SMD Type TransistorsPNP Transistors2SA1815SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.1 Features 3 High power gain : PG=25dB (f=100MHz). High cutoff frequency ; fT=750MHz typ. Low collector-to-emitter saturation voltage. 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary pair with the 2SC4432.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Max

SMD Type TransistorsPNP Transistors2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO1 Base2 Emitter3 Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector

SMD Type TransistorsPNP Transistors2SA18711.70 0.1 Features High voltage Fast switching speed Complementary transistor with 2SC49420.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -600 Collector - Emitter Voltage VCEO -600 V Emitter - Base Voltage VEBO -7

SMD Type TransistorsPNP Transistors2SA1882SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-15V Complementary to 2SC49840.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCE

2SA1837 PNP PNP Epitaxial Silicon Transistor APPLICATIONS Power Amplifier Applications FEATURES VCEO=-230V (min) High collector voltageVCEO=-230V (min) 2SC4793 Complementa

Silicon PNP transistorPower Amplifier Applications Complementary to 2SC4793 High collector voltage:VCEO=-230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operati

2SA1837Minos Silicon PNP Epitaxial Type2SA1837Power Amplifier ApplicationsComplementaryto 2SC4793Highcollector voltage:VCEO=-230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions (i.e

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1878DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -2.5ACE(sat) CLarge Current Capability-I = -5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PML package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1887DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VC

isc Silicon PNP Power Transistor 2SA1860DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION With TO-220F package Complement to type 2SC4883/4883A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PML package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1880DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -5ACE(sat) CLarge Current Capability-I = -10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1837DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SC4793Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE

isc Silicon PNP Power Transistor 2SA1869DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4935Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

isc Silicon PNP Power Transistor 2SA1859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOComplement to Type 2SC4883Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PML package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsol

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1879DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -3.5ACE(sat) CLarge Current Capability-I = -7ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1822DESCRIPTIONHigh Collector-Emitter Breakdown VoltageExcellent switching time100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High speed DC-DC converter applicationABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SA1859ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOComplement to Type 2SC4883AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output driver and TV velocity-modulationapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN