2SA18H datasheet, аналоги, основные параметры
Наименование производителя: 2SA18H 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 21 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 9 MHz
Ёмкость коллекторного перехода (Cc): 12 pf
Статический коэффициент передачи тока (hFE): 140
Корпус транзистора: TO1
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Аналоги (замена) для 2SA18H
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2SA18H даташит
2sa1832ft.pdf
2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -50 V High current I = -150 mA (max) C High h h = 120 to 400 FE FE Excellent h linearity FE h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum
2sa1832.pdf
2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum
2sa1887.pdf
2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) at IC = -5 A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V Colle
2sa1832f.pdf
2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SC4738F Small package Ma
2sa1873.pdf
2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h FE Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2SC4944 Maximum R
2sa1802.pdf
2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C
2sa1832o 2sa1832y 2sa1832gr.pdf
2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum
2sa1837.pdf
2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 70 MHz (typ.) Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitter voltage VCEO -230 V Emitter-base vo
2sa1865.pdf
Ordering number EN4720 PNP Epitaxial Planar Silicon Transistor 2SA1865 Muting Circuits, Driver Applications Features Package Dimensions On-chip bias resistors (R1=10k , R2=10k ). unit mm Very small-sized package making 2SA1865-applied 2106A sets to small and slim. [2SA1865] Small ON resistance. High gain-bandwidth product fT. 1 Base 2 Emitter 3 Collec
2sa1896.pdf
Ordering number 4718A PNP Epitaxial Planar Silicon Transistor 2SA1896 DC/DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET processes. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SA1896] Small size making it easy to provide high-density, small-sized hybrid ICs. 1 Base 2 Collector 3 Em
2sa1852 2sc4826.pdf
Ordering number ENN5495A 2SA1852 / 2SC4826 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, unit mm wide-band amplifer. 2084B [2SA1852 / 2SC4826] Features 4.5 1.9 2.6 10.5 1.2 1.4 Adoption of FBET process. High fT fT=
2sa1814.pdf
Ordering number EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1814- unit mm applied sets to be made smaller and slimmer. 2018B Adoption of FBET process. [2SA1814] High DC current gain (hFE=500 to 1200). Low collector
2sa1838.pdf
Ordering number EN4665 PNP Epitaxial Planar Silicon Transistor 2SA1838 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1838- unit mm applied sets to be made small and slim. 2059A Small output capacitance. [2SA1838] Low collector-to-emitter saturation voltage. Low ON resistance. 1 Base 2 Emitter 3 Collector SANY
2sa1864.pdf
Ordering number EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions On-chip bias resistors (R1=4.7k , R2=4.7k ). unit mm Very small-sized package making 2SA1864-applied 2106A sets small and slim. [2SA1864] High gain-bandwidth product fT. 1 Base 2 Emitter 3 Collector SANYO SMCP Specificati
2sa1854.pdf
Ordering number EN4133 PNP Epitaxial Planar Silicon Transistor 2SA1854 20V/5A Switching Applications Applications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit mm 2084B Features [2SA1854] Adoption of FBET and MBIT processes. Large allowable collector dissipation. Low saturation voltage. Large current capacity. Fast switching sp
2sa1883.pdf
Ordering number 4660A PNP Epitaxial Planar Silicon Transistor 2SA1883 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm Low collector saturatio voltage. 2106A High gain-bandwidth product. [2SA1883] Small collector capacitance. Very small-sized package permitting 2SA1883- applied sets to be made small and slim. Compl
2sa1839.pdf
Ordering number EN4666 PNP Epitaxial Planar Silicon Transistor 2SA1839 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1839- unit mm applied sets to be made small and slim. 2018B Small output capacitance. [2SA1839] Low collector-to-emitter saturation voltage. Low ON resistance. 1 Base 2 Emitter 3 Collector SANYO
2sa1831.pdf
Ordering number EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 800V). unit mm Small Cob (Cob typ=1.6pF). 2010B High reliabirity (Adoption of HVP processes). [2SA1831] JEDEC TO-220AB E Emitter EIAJ SC-46 C Collector B Base
2sa1823.pdf
Ordering number EN3870 PNP Epitaxial Planar Silicon Transistor 2SA1823 20V/8A Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm Low saturation voltage. 2084 Fast swicthing speed. [2SA1823] Large current capacity. It is possible to make appliances more compact because it s height on board is 9.5mm. Meets radial taping. E
2sa1857.pdf
Ordering number EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB typ (f=100MHz). unit mm High cutoff frequency fT=750MHz typ. 2059A Low collector-to-emitter saturation voltage. [2SA1857] Complementary pair with the 2SC4400. 1
2sa1898.pdf
Ordering number 5049 PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Application Applications Package Dimensions High-speed switching. unit mm 2038A Features [2SA1898] Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. 1 Base 2 Collector 3 Emitter SANYO PCP (Bo
2sa1815.pdf
Ordering number EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions High power gain PG=25dB (f=100MHz). unit mm High cutoff frequency ; fT=750MHz typ. 2018A Low collector-to-emitter saturation voltage. [2SA1815] Complementary pair with the 2SC4432. C C
2sa1875 2sc4976.pdf
Ordering number ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz(typ). unit mm High breakdown voltage VCEO 200V(min). 2045B Large current capacitance. [2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle
2sa1866.pdf
Ordering number 4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions On-chip bias resistors (R1=47k , R2=47k ). unit mm Very small-sized package making 2SA1866-applied 2106A sets small and slim. [2SA1866] Small ON resistance. High gain-bandwidth product fT. 1 Base 2 Emitter 3 Collector S
2sa1813.pdf
Ordering number EN3972 PNP Epitaxial Planar Silicon Transistor 2SA1813 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1813- unit mm applied sets to be made smaller and slimmer. 2059A Adoption of FBET process. [2SA1813] High DC current gain (hFE=500 to 1200). Low collector
2sa1836.pdf
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.1 0 0.05 FEATURES High DC current gain hFE2 = 200 TYP. 3 0 to 0.1 High voltage VCEO = -50 V Can be automatically mounted 2 1 0.2+0.1 0 ORDERING INFORMATION 0.6
2sa1847.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specific
2sa1840.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1840 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounte
2sa1843.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping sp
2sa1897.pdf
DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT mm) for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES High current capaci
2sa1845.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specific
2sa1841.pdf
DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SA1841 MP-10 control for pulse motors brushless motors in OA and FA
2sa1871.pdf
DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT mm) voltage switching and is ideal for use in switching elements such as switching regulators and DC/DC converters. FEATURES New package with dimensions in between those of small signal
2sa1862.pdf
2SA1862 Transistors High-voltage Switching Transistor (-400V, -2A) 2SA1862 External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = -400V) 6.5 CPT3 5.1 2.3 2) Low saturation voltage. 0.5 (Max. VCE (sat) = -0.5V at IC / IB = -500mA / -100mA) 3) High switching speed, typically tf = 0.4 s at IC = -1A. 4) Wide SOA (safe operating area). 0.75 Ab
2sa1834 2sc5001.pdf
2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
2sa1834.pdf
2SA1834 Transistors Low VCE(sat) Transistor (Strobe flash) (-20V, -10A) 2SA1834 External dimentions (Unit mm) Features 1) Low saturation voltage, CPT3 6.5 5.1 typically VCE(sat) = -0.16V at IC / IB= -4A / -50mA. 2.3 0.5 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SC5001. 0.75 Packaging specif
2sa1807 2sa1862.pdf
2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
2sa1812 2sa1727 2sa1776.pdf
2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25 C) Paramete
2sa1807.pdf
2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307
2sa1832-gr.pdf
MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meets UL 94 V-
2sa1832-y.pdf
MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meets UL 94 V-
2sa1890 e.pdf
Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC5026 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi
2sa1858.pdf
Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitter to base vol
2sa1806.pdf
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Pa
2sa1806 e.pdf
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Pa
2sa1816 e.pdf
Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5
2sa1890.pdf
Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC5026 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazi
2sa1858 e.pdf
Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 300 V 1.27 1.27 Emitter to base vol
2sa1816.pdf
Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5
2sa1837.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 2SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube
2sa1810.pdf
2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SA1810 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra
2sa1832.pdf
2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 Product-Rank 2SA1832-Y 2SA1832-GR K E
2sa1878.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1878 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
2sa1803.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PFM package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute
2sa1887.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1887 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Coll
2sa1860.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1860 DESCRIPTION With TO-3PML package Complement to type 2SC4886 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta
2sa1859 2sa1859a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION With TO-220F package Complement to type 2SC4883/4883A APPLICATIONS For audio output driver and TV velocity-modulation applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARA
2sa1804.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PFM package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute ma
2sa1880.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1880 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
2sa1837.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1837 DESCRIPTION With TO-220F package Complement to type 2SC4793 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25
2sa1869.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1869 DESCRIPTION With TO-220F package Complement to type 2SC4935 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter
2sa1805.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PFM package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute
2sa1879.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em
2sa1859.pdf
2SA1859/1859A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) Application Audio Output Driver and TV Velocity-modulation (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM20(TO220F) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SA1859 2SA1859A 2SA1859 2SA1859A 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 15
2sa1876.pdf
SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1876 Case E-pack (TE3T8) Unit mm -3A PNP RATINGS
2sa1880.pdf
SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1880 Case ITO-220 Unit mm (TP10T8) -10A PNP RATINGS
2sa1877.pdf
SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1877 Case E-pack Unit mm (TE5T8) -5A PNP RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -80 V Emitter to Base Voltage VEBO -7 V Collector
2sa1879.pdf
SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1879 Case ITO-220 Unit mm (TP7T8) -7A PNP RATINGS
2sa1873.pdf
2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features SOT-353 Small package (dual type) High voltage and high current High hFE Excellent hFE linearity 1 Complementary to 2SC4944 MARKING SY SGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO Emitter-Base Volta
2sa1832.pdf
2SA1832 PNP TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES * High voltage and high current * Excellent hFE linearity SOT-523(SC-75) * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous
2sa1837.pdf
PNP PNP Epitaxial Silicon Transistor R 2SA1837 APPLICATIONS Power Amplifier Applications FEATURES V =-230V (min) High collector voltage V =-230V (min) CEO CEO 2SC4793 Complementary to 2SC4793 High transition frequency fT=70MHz(Typ.) f T=70MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Marking Ha
2sa1837af.pdf
RoHS RoHS 2SA1837AF SEMICONDUCTOR Nell High Power Products High Frequency PNP Power Transistor -1A/-230V/20W FEATURES High transition frequency fT = 70MHz (typ.) Complementary to 2SC4793AF B C TO-220F package which can be E installed to the heat sink with one screw TO-220F (2SA1837AF) APPLICATIONS Power amplifier (2) C Driver stage amplifier B (1) PNP E(3) ABSO
2sa1832.pdf
SMD Type Transistors PNP Transistors 2SA1832 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features High voltage and high current Excellent hFE linearity 3 Complementary to 2SC4738 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -
2sa1881.pdf
SMD Type Transistors PNP Transistors 2SA1881 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-1A 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 Complementary to 2SC4983 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sa1896.pdf
SMD Type Transistors PNP Transistors 2SA1896 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag
2sa1812.pdf
SMD Type Transistors PNP Transistors 2SA1812 1.70 0.1 Features High breakdown voltage, BVCEO=-400V. High switching speed, typically tf 1us at IC =-100mA. 0.42 0.1 0.46 0.1 High-voltage Switching Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter V
2sa1875.pdf
SMD Type Transistors PNP Transistors 2SA1875 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High fT fT=400MHz(typ). High breakdown voltage 0.127 +0.1 Large current capacitance. 0.80-0.1 max Complements to 2SC4976 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratin
2sa1890.pdf
SMD Type Transistors PNP Transistors 2SA1890 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage
2sa1839.pdf
SMD Type Transistors PNP Transistors 2SA1839 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 Features 3 Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V
2sa1837.pdf
DIP Type Transistors Transistors PNP Transistors 2SA1837 TO-220MF Units mm Features High collector voltage VCEO=-230V (min) Complementary to 2SC4793 High transition frequency fT=70MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -230 Collector - Emitter Voltage VCEO -230 V Emit
2sa1898.pdf
SMD Type Transistors PNP Transistors 2SA1898 1.70 0.1 Features Large current capacity. Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 Fast switching speed. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -15 V Emitter - Base
2sa1815.pdf
SMD Type Transistors PNP Transistors 2SA1815 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 Features 3 High power gain PG=25dB (f=100MHz). High cutoff frequency ; fT=750MHz typ. Low collector-to-emitter saturation voltage. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary pair with the 2SC4432. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Max
2sa1813.pdf
SMD Type Transistors PNP Transistors 2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO 1 Base 2 Emitter 3 Colletor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector
2sa1871.pdf
SMD Type Transistors PNP Transistors 2SA1871 1.70 0.1 Features High voltage Fast switching speed Complementary transistor with 2SC4942 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -600 Collector - Emitter Voltage VCEO -600 V Emitter - Base Voltage VEBO -7
2sa1882.pdf
SMD Type Transistors PNP Transistors 2SA1882 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-15V Complementary to 2SC4984 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCE
2sa1837.pdf
2SA1837 PNP PNP Epitaxial Silicon Transistor APPLICATIONS Power Amplifier Applications FEATURES VCEO=-230V (min) High collector voltage VCEO=-230V (min) 2SC4793 Complementa
2sa1837.pdf
Silicon PNP transistor Power Amplifier Applications Complementary to 2SC4793 High collector voltage VCEO=-230V (min) Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati
2sa1837.pdf
2SA1837 Minos Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Complementaryto 2SC4793 Highcollector voltage VCEO=-230V (min) Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis product todecrease inthe reliability significantly even if the operating conditions (i.e
2sa1878.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1878 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -2.5A CE(sat) C Large Current Capability-I = -5A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver
2sa1803.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PML package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol
2sa1887.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1887 DESCRIPTION Low Collector Saturation Voltage Large Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V C
2sa1860.pdf
isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sa1804.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PML package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol
2sa1880.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1880 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -5A CE(sat) C Large Current Capability-I = -10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver
2sa1837.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SC4793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE
2sa1869.pdf
isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4935 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
2sa1859.pdf
isc Silicon PNP Power Transistor 2SA1859 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Complement to Type 2SC4883 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sa1805.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PML package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol
2sa1879.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1879 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -3.5A CE(sat) C Large Current Capability-I = -7A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver
2sa1822.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1822 DESCRIPTION High Collector-Emitter Breakdown Voltage Excellent switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications. High speed DC-DC converter application ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sa1859a.pdf
isc Silicon PNP Power Transistor 2SA1859A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Complement to Type 2SC4883A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Другие транзисторы: 2SA1859, 2SA1859A, 2SA1860, 2SA188, 2SA1889, 2SA1889B, 2SA1889C, 2SA189, TIP2955, 2SA19, 2SA190, 2SA1907, 2SA1908, 2SA1909, 2SA191, 2SA192, 2SA193
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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