2SA194 datasheet, аналоги, основные параметры
Наименование производителя: 2SA194 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.015 A
Предельная температура PN-перехода (Tj): 80 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO1
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Аналоги (замена) для 2SA194
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2SA194 даташит
0.1. Size:156K toshiba
2sa1943n.pdf 
2SA1943N Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 2SA1943N 2SA1943N 2SA1943N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier outpu
0.3. Size:157K toshiba
2sa1941r 2sa1941o.pdf 
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle
0.4. Size:133K toshiba
2sa1943.pdf 
2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit mm High collector voltage VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Coll
0.5. Size:157K toshiba
2sa1941.pdf 
2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle
0.8. Size:487K fairchild semi
2sa1943 fjl4215.pdf 
January 2009 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A. High Power Dissipation 150watts. TO-264 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Ex
0.9. Size:330K onsemi
2sa1943rtu 2sa1943otu fjl4215rtu fjl4215otu.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.10. Size:182K utc
2sa1943.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube 2SA
0.11. Size:123K isahaya
2sa1946.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
0.12. Size:121K isahaya
2sa1947.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
0.13. Size:120K isahaya
2sa1945.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
0.14. Size:185K isahaya
2sa1948.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
0.15. Size:144K isahaya
2sa1944.pdf 
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
0.16. Size:202K jmnic
2sa1942.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION With TO-3PL package Complement to type 2SC5199 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
0.17. Size:198K jmnic
2sa1943.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol
0.18. Size:196K jmnic
2sa1941.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
0.19. Size:202K jmnic
2sa1940.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1940 DESCRIPTION With TO-3P(I) package Complement to type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
0.20. Size:1367K jilin sino
2sc5198 2sa1941.pdf 
Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO
0.23. Size:219K nell
2sa1943bl.pdf 
RoHS 2SA1943BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -15A/-230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS S
0.24. Size:208K nell
2sa1941b.pdf 
RoHS 2SA1941B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -10A/-140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO = -140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SC5198B B C E TO-3P package which can be installed to the
0.25. Size:866K kexin
2sa1946.pdf 
SMD Type Transistors PNP Transistors 2SA1946 1.70 0.1 Features Low collector saturation voltage High fT,fT=180MHz(typ) High collector current ICM=-1A 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5212 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25
0.26. Size:850K kexin
2sa1947.pdf 
SMD Type Transistors PNP Transistors 2SA1947 1.70 0.1 Features High fT,fT=100MHz(typ) High collector current ICM=-1.5A Small package for mounting 0.42 0.1 0.46 0.1 Complements to 2SC5214 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -2
0.27. Size:862K kexin
2sa1945.pdf 
SMD Type Transistors PNP Transistors 2SA1945 1.70 0.1 Features High voltage High fT,fT=150MHz(typ) High collector current ICM=-600mA 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5211 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emi
0.28. Size:1096K kexin
2sa1948.pdf 
SMD Type Transistors PNP Transistors 2SA1948 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-120V Complementary to 2SC5213 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V
0.29. Size:980K kexin
2sa1944.pdf 
SMD Type Transistors PNP Transistors 2SA1944 1.70 0.1 Features High voltage Low collector-to-emitter saturation voltage. High hFE hFE=400 to 800 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5209 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Col
0.30. Size:272K lzg
2sa1941 3ca1941.pdf 
2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications. 70W 2SC5198 3DA5198 Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25 )
0.31. Size:848K cn evvo
2sa1943.pdf 
Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SC5200 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc
0.32. Size:1244K cn evvo
2sa1941.pdf 
2SA1941 Silicon PNP transistor Power Amplifier Applications Complementary to 2SC5198 High collector voltage VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the applicatio of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to d
0.33. Size:1285K cn sps
2sa1941t6tl.pdf 
2SA1941T6TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle
0.34. Size:1806K cn sps
2sa1943t7tl.pdf 
2SA1943T7TL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -230 V CBO V Collector-
0.35. Size:145K cn minos
2sa1943.pdf 
2SA1943 Minos High Power Products PNP TRANSISTORS Features Power Amplifier Applications Complementaryto2SC5200 Highcollector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro
0.36. Size:178K cn sptech
2sa1940r 2sa1940o.pdf 
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
0.37. Size:427K cn sptech
2sa1941r 2sa1941o.pdf 
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
0.38. Size:425K cn sptech
2sa1943r 2sa1943o.pdf 
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base V
0.39. Size:301K cn yw
2sa1941.pdf 
2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta
0.40. Size:214K inchange semiconductor
2sa1943n.pdf 
isc Silicon PNP Power Transistor 2SA1943N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency a
0.41. Size:219K inchange semiconductor
2sa1942.pdf 
isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC5199 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RA
0.42. Size:204K inchange semiconductor
2sa1943.pdf 
isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V =- 230V(Min) (BR)CEO Complement to Type 2SC5200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp
0.43. Size:221K inchange semiconductor
2sa1941.pdf 
isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app
0.44. Size:221K inchange semiconductor
2sa1940.pdf 
isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app
Другие транзисторы: 2SA19, 2SA190, 2SA1907, 2SA1908, 2SA1909, 2SA191, 2SA192, 2SA193, TIP142, 2SA195, 2SA1958, 2SA196, 2SA1967, 2SA1968, 2SA197, 2SA198, 2SA199
