Биполярный транзистор 2SA211 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA211
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 85 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO5
2SA211 Datasheet (PDF)
2sa2112.pdf
Ordering number : ENN73792SA2112PNP Epitaxial Planar Silicon Transistors2SA2112High Current Switching ApplicationsApplicationsPackage Dimensions DC-DC converter, relay drivers, lamp drivers,unit : mmmotor drivers, strobes.2064A[2SA2112]Features 2.51.45 Adoption of MBIT process.6.9 1.0 Large current capacitance. Low collector-to-emitter saturation vo
2sa2117.pdf
Ordering number : ENN79062SA2117 / 2SC5934PNP / NPN Epitaxial Planar Silicon Transistors2SA2117 / 2SC5934High Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2117 / 2SC5934]4.5 Adoption of MBIT process. 10.02.8 High-speed switching.3.2 Large current capacitance. Low
2sa2030 2sa2018 2sa2119k.pdf
2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10
2sa2018 2sa2018 2sa2030 2sa2119k.pdf
2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each
2sa2113.pdf
2SA2113 Transistor Medium power transistor (-30V, -2A) 2SA2113 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) 2.81.6TSMT32) Low saturation voltage, typically (Typ. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 (1)Base 0.3 0.6 Each
2sa2112-an.pdf
Ordering number : EN7379A2SA2112Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single NMPApplicaitons DC-DC converter, relay drivers, lamp drivers, motor drivers, strobesFeatures Adoption of MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=2
2sa2119gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SA2119GPSURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SOT-23) SOT-23* A collector current is large.* Collector saturation voltage is low.VCE(sat)
2sa2119tgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SA2119TGPSURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* A collector current is large.* Collector saturation voltage is low.VCE(sat)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050