Биполярный транзистор 2SA605 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA605
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 165 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO18
2SA605 Datasheet (PDF)
2sa608n 2sc536n.pdf
Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441
2sa608 2sc536n.pdf
Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter
2sa608n.pdf
2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G HAPPLICATIONS EmitterCollector Capable of being used in the low frequency to Base Jhigh frequency range. A DMillimeterREF.B Min.
2sa608.pdf
2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Capable of being used in the low frequency to high frequency range. G Large current capacity and wide ASO. HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA60
2sa608.pdf
2SA608(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -30 VDimensions in inches and (mil
2sa608s.pdf
RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25) 3. BASE Collector current ICM : -100 mA 123 Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050