2SA605 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA605
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
2SA605 Transistor Equivalent Substitute - Cross-Reference Search
2SA605 Datasheet (PDF)
9.1. 2sa606 2sa607 2sc959 2sc960.pdf 
Size:69K _1
9.2. 2sa608n 2sc536n.pdf Size:36K _sanyo
Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441
9.3. 2sa608 2sc536n.pdf Size:40K _sanyo
Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter
9.4. 2sa606.pdf Size:69K _no
9.5. 2sa608.pdf Size:428K _secos
2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Capable of being used in the low frequency to high frequency range. G Large current capacity and wide ASO. HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA60
9.6. 2sa608n.pdf Size:77K _secos
2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G HAPPLICATIONS EmitterCollector Capable of being used in the low frequency to Base Jhigh frequency range. A DMillimeterREF.B Min.
9.7. 2sa608.pdf Size:239K _lge
2SA608(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -30 VDimensions in inches and (mil
9.8. 2sa608s.pdf Size:94K _wej
RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25) 3. BASE Collector current ICM : -100 mA 123 Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Datasheet: 2SA594 , 2SA594O , 2SA594R , 2SA594Y , 2SA597 , 2SA60 , 2SA603 , 2SA604 , 13007 , 2SA606 , 2SA606S , 2SA607 , 2SA607S , 2SA608 , 2SA608K , 2SA608KNP , 2SA608NP .
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