Справочник транзисторов. 2SA636

 

Биполярный транзистор 2SA636 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SA636

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 12 W

Макcимально допустимое напряжение коллектор-база (Ucb): 70 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 30 MHz

Ёмкость коллекторного перехода (Cc): 60 pf

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO202

Аналоги (замена) для 2SA636

 

 

2SA636 Datasheet (PDF)

..1. 2sa636 2sa636a.pdf Size:150K _jmnic

2SA636 2SA636

JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202)

..2. 2sa636 2sa636a.pdf Size:146K _inchange_semiconductor

2SA636 2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified

9.1. 2sa634.pdf Size:47K _no

2SA636

9.2. 2sa634.pdf Size:122K _jmnic

2SA636

Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju

 9.3. 2sa633.pdf Size:109K _jmnic

2SA636

Power Transistors www.jmnic.com2SA633 Silicon PNP Transistors B C E Features With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Jun

9.4. 2sa635.pdf Size:180K _inchange_semiconductor

2SA636 2SA636

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA635DESCRIPTIONWith TO-202 packageHigh current capabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6

 9.5. 2sa634.pdf Size:146K _inchange_semiconductor

2SA636 2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION With TO-202 package Complement to type 2SC1096 High current capability APPLICATIONS Audio frequency power amplifier Low speed switching PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratin

9.6. 2sa633.pdf Size:137K _inchange_semiconductor

2SA636 2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION With TO-202 package High current capability APPLICATIONS Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

Другие транзисторы... 2SA628A , 2SA629 , 2SA631 , 2SA633 , 2SA634 , 2SA634L , 2SA634Z , 2SA635 , MJE340 , 2SA636A , 2SA636L , 2SA636Z , 2SA637 , 2SA638 , 2SA638S , 2SA639 , 2SA639S .

 

 
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