All Transistors. 2SA636 Datasheet

 

2SA636 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA636

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

2SA636 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA636 Datasheet (PDF)

0.1. 2sa636 2sa636a.pdf Size:150K _jmnic

2SA636
2SA636

JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202)

0.2. 2sa636 2sa636a.pdf Size:146K _inchange_semiconductor

2SA636
2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

 9.1. 2sa634.pdf Size:47K _no

2SA636



9.2. 2sa634.pdf Size:122K _jmnic

2SA636

Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features ﹒With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju

 9.3. 2sa633.pdf Size:109K _jmnic

2SA636

Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors B C E Features ﹒With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Jun

9.4. 2sa635.pdf Size:180K _inchange_semiconductor

2SA636
2SA636

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA635 DESCRIPTION ·With TO-202 package ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -6

 9.5. 2sa634.pdf Size:146K _inchange_semiconductor

2SA636
2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratin

9.6. 2sa633.pdf Size:137K _inchange_semiconductor

2SA636
2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION ·With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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