All Transistors. 2SA636 Datasheet

 

2SA636 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA636

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO202

2SA636 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA636 Datasheet (PDF)

1.1. 2sa636 2sa636a.pdf Size:150K _jmnic

2SA636
2SA636

JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) an

1.2. 2sa636 2sa636a.pdf Size:146K _inchange_semiconductor

2SA636
2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified ou

 5.1. 2sa634.pdf Size:47K _no

2SA636

5.2. 2sa634.pdf Size:122K _jmnic

2SA636

Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features ?With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Junctio

 5.3. 2sa633.pdf Size:109K _jmnic

2SA636

Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors B C E Features ?With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Junction

5.4. 2sa634.pdf Size:146K _inchange_semiconductor

2SA636
2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings

 5.5. 2sa633.pdf Size:137K _inchange_semiconductor

2SA636
2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION ·With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co

Datasheet: 2SA628A , 2SA629 , 2SA631 , 2SA633 , 2SA634 , 2SA634L , 2SA634Z , 2SA635 , TIP31C , 2SA636A , 2SA636L , 2SA636Z , 2SA637 , 2SA638 , 2SA638S , 2SA639 , 2SA639S .

Back to Top

 


2SA636
  2SA636
  2SA636
 

social 

LIST

Last Update

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

Back to Top