2SA715D - Даташиты. Аналоги. Основные параметры

2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector

JMnic Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION With TO-126 package Complement to type 2SC1162 APPLICATIONS Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

2SA715F(BR3CA715QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features 2SC1162F(BR3DA1162QF) Complementary pair with 2SC1162F(BR3DA1162QF). / Applications Low frequency power amplifier applications.

isc Silicon PNP Power Transistor 2SA715 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -35V (Min) (BR)CEO Complement to Type 2SC1162 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER