2SA757 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION With TO-3 package Complement to type 2SC897 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

isc Silicon PNP Power Transistor 2SA757 DESCRIPTION High Power Dissipation- P = 60W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -90V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS

JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1343 APPLICATIONS For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL

JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION With TO-220 package Complement to type 2SC1419 Note Type 2SA754 with short pin APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum

JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION With TO-3 package Complement to type 2SC898 APPLICATIONS For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION With TO-3 package Complement to type 2SC1030 APPLICATIONS For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

isc Silicon PNP Power Transistor 2SA753 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC1343 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100W audio amplifier power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-

isc Silicon PNP Power Transistor 2SA755 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.3V(Max.) @ I = -1.5A CE(sat) C Good Linearity of h FE Complement to Type 2SC1419 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power ampli

isc Silicon PNP Power Transistor 2SA758 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -110V(Min.) (BR)CEO Complement to Type 2SC898 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applicati

isc Silicon PNP Power Transistor 2SA754 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.3V(Max.) @ I = -1.5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

isc Silicon PNP Power Transistor 2SA756 DESCRIPTION High Power Dissipation- P = 50W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS