All Transistors. 2SA757 Datasheet

 

2SA757 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SA757

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 12 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

2SA757 Transistor Equivalent Substitute - Cross-Reference Search

2SA757 Datasheet (PDF)

1.1. 2sa757.pdf Size:153K _jmnic

2SA757
2SA757

JMnic Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION ·With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

1.2. 2sa757.pdf Size:193K _inchange_semiconductor

2SA757
2SA757

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION ·With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALU

5.1. 2sa753.pdf Size:153K _jmnic

2SA757
2SA757

JMnic Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1343 APPLICATIONS ·For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAM

5.2. 2sa758.pdf Size:153K _jmnic

2SA757
2SA757

JMnic Product Specification Silicon PNP Power Transistors 2SA758 DESCRIPTION ·With TO-3 package ·Complement to type 2SC898 APPLICATIONS ·For 80W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

5.3. 2sa756.pdf Size:152K _jmnic

2SA757
2SA757

JMnic Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION ·With TO-3 package ·Complement to type 2SC1030 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col

5.4. 2sa755.pdf Size:155K _jmnic

2SA757
2SA757

JMnic Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum rat

5.5. 2sa754.pdf Size:237K _inchange_semiconductor

2SA757
2SA757

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA754 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.3V(Max.) @ IC= -1.5A ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

5.6. 2sa753.pdf Size:193K _inchange_semiconductor

2SA757
2SA757

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA753 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1343 APPLICATIONS ·For 100W audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=

5.7. 2sa758.pdf Size:56K _inchange_semiconductor

2SA757
2SA757

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA758 DESCRIPTION ·High Power Dissipation- : PC= 80W(Max.)@TC=25? ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

5.8. 2sa756.pdf Size:191K _inchange_semiconductor

2SA757
2SA757

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION ·With TO-3 package ·Complement to type 2SC1030 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VAL

5.9. 2sa755.pdf Size:119K _inchange_semiconductor

2SA757
2SA757

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abs

Datasheet: 2SA75 , 2SA750 , 2SA751 , 2SA752 , 2SA753 , 2SA754 , 2SA755 , 2SA756 , 2N2222 , 2SA758 , 2SA759 , 2SA76 , 2SA760 , 2SA761 , 2SA761-1 , 2SA761-2 , 2SA761S .

 


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