2SA881 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SA881 Даташит. Аналоги

   Наименование производителя: 2SA881
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 20 pf
   Статический коэффициент передачи тока (hfe): 82
   Корпус транзистора: FTR

Аналог (замена) для 2SA881

- подбор ⓘ биполярного транзистора по параметрам

2SA881 Datasheet (PDF)

..1. Size:105K 1
2sa881.pdf pdf_icon

9.1. Size:63K panasonic
2sa885.pdf pdf_icon

Power Transistors2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)2SA0885 (2SA885)Silicon PNP epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SC1846 3.160.1 Features Output of 3 W can be obtained by a complementary pair with2SC1846 TO-126B package which requires no insulation plat

9.2. Size:128K panasonic
2sa880.pdf pdf_icon

9.3. Size:121K panasonic
2sa887.pdf pdf_icon

9.4. Size:94K panasonic
2sa886.pdf pdf_icon

Power Transistors2SA0886 (2SA886)Silicon PNP epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SC1847 3.160.1 Features Output of 4 W can be obtained by a complementary pair with2SC1847 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings

9.5. Size:50K no
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9.6. Size:201K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIO

9.7. Size:97K jmnic
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Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA882 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS For power and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector

9.8. Size:169K jmnic
2sa887.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base vo

9.9. Size:193K jmnic
2sa886.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIO

9.10. Size:174K china
2sa885 3ca885.pdf pdf_icon

2SA885(3CA885) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier. :V , 2SC1846(3DA1846) 3W CE(sat)Features: Low V ,output of 3W can be obtained by a complementary pair with 2SC1846(3DA1846). CE(sat)/Absolute maximum ratings(Ta=25) Symbo

9.11. Size:229K inchange semiconductor
2sa885.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL P

9.12. Size:192K inchange semiconductor
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isc Silicon PNP Power Transistor 2SA882DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -130V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

9.13. Size:183K inchange semiconductor
2sa887.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION With TO-202 package Complement to type 2SC1848 APPLICATIONS Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

9.14. Size:222K inchange semiconductor
2sa886.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION With TO-126 package Complement to type 2SC1847 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL P

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .