2SA967 datasheet, аналоги, основные параметры
Наименование производителя: 2SA967 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 8 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4000 MHz
Ёмкость коллекторного перехода (Cc): 0.8 pf
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO220
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Аналоги (замена) для 2SA967
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2SA967 даташит
9.5. Size:78K secos
2sa965tm.pdf 
2SA965TM -0.8A , -120V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SC2235 A D Power Amplifier Applications B CLASSIFICATION OF hFE Product-Rank 2SA965-O 2SA965-Y K E F Range 80-160 120-240 C N G H 1 Emitter 1 1 1 2 Collector 2
9.6. Size:434K jiangsu
2sa966.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SA966 TRANSISTOR (PNP) 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR 3. BASE Equivalent Circuit A966=Device code A 9 6 6 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR
9.7. Size:160K jmnic
2sa968 2sa968a 2sa968b.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION With TO-220 package Complement to type 2SC2238 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
9.8. Size:190K jmnic
2sa963.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA963 DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE
9.9. Size:162K jmnic
2sa969.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION With TO-66 package Complement to type 2SC2239 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=2
9.10. Size:189K lge
2sa966.pdf 
2SA966 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features Complementary to 2SC2236 and 3 Watts output Applications. 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.600 0.800 Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V 0.350 0.550 VCEO Collector-Emitter Voltage -30 V 13.800 14.200 VEB
9.11. Size:193K lge
2sa966 to-92mod.pdf 
2SA966 TO-92MOD Transistor (PNP) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE 5.800 Features 6.200 Complementary to 2SC2236 and 8.400 8.800 3 Watts output Applications. 0.900 1.100 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.400 0.600 Symbol Parameter Value Units 13.800 VCBO Collector-Base Voltage -30 V 14.200 VCEO Collector-Emitter Voltage -30
9.12. Size:947K blue-rocket-elect
2sa966t.pdf 
2SA966T(BR3CG966T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SC2236T(BR3DG2236T) Complementary to 2SC2236T(BR3DG2236T). / Applications AF power amplifier applications. / Equivalent Circu
9.13. Size:205K inchange semiconductor
2sa968.pdf 
isc Silicon PNP Power Transistor 2SA968 DESCRIPTION Collector-Emitter Breakdown Voltage V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2238 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
9.14. Size:91K inchange semiconductor
2sa968 2sa968a2sa968b.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B DESCRIPTION With TO-220 package Complement to type 2SC2238 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO
9.15. Size:213K inchange semiconductor
2sa965.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA965 DESCRIPTION Power amplifier applications Driver stage amplifier applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB
9.16. Size:203K inchange semiconductor
2sa968b.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA968B DESCRIPTION Collector-Emitter Breakdown Voltage V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2238B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATIN
9.17. Size:202K inchange semiconductor
2sa968 2sa968a 2sa968b.pdf 
isc Silicon PNP Power Transistor 2SA968 A B DESCRIPTION With TO-220 packaging Complement to Type 2SC2238 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SA968 -160 V Collector-Base Voltage 2SA
9.18. Size:178K inchange semiconductor
2sa963.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA963 DESCRIPTION With TO-126 package Complement to type 2SC2209 High collector power dissipation APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER
9.19. Size:199K inchange semiconductor
2sa969.pdf 
isc Silicon PNP Power Transistor 2SA969 DESCRIPTION Collector-Emitter Breakdown Voltage V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2239 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
Другие транзисторы: 2SA964, 2SA964A, 2SA965, 2SA965O, 2SA965Y, 2SA966, 2SA966O, 2SA966Y, 2SD718, 2SA968, 2SA968A, 2SA968B, 2SA969, 2SA97, 2SA970, 2SA970BL, 2SA970GR
