2SA98 datasheet, аналоги, основные параметры
Наименование производителя: 2SA98 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO7
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Аналоги (замена) для 2SA98
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2SA98 даташит
0.4. Size:70K wingshing
2sa985.pdf 
2SA985 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC2275 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -7 V Collector Current (DC) IC -1.5 A Collector Dissipation (Tc=25 PC 25 W
0.5. Size:65K wingshing
2sa986a.pdf 
2SA986A PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -180 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Junction Temperature Tj
0.6. Size:160K jmnic
2sa985 2sa985a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3
0.7. Size:151K jmnic
2sa980 2sa981 2sa982.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CO
0.8. Size:207K inchange semiconductor
2sa985.pdf 
isc Silicon PNP Power Transistor 2SA985 DESCRIPTION Collector-Emitter Breakdown Voltage V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS
0.9. Size:194K inchange semiconductor
2sa981.pdf 
isc Silicon PNP Power Transistor 2SA981 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC2261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
0.10. Size:131K inchange semiconductor
2sa980 2sa981 2sa982.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SY
0.11. Size:91K inchange semiconductor
2sa985-a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
0.12. Size:194K inchange semiconductor
2sa982.pdf 
isc Silicon PNP Power Transistor 2SA982 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -140V(Min.) (BR)CEO Complement to Type 2SC2262 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
0.13. Size:194K inchange semiconductor
2sa980.pdf 
isc Silicon PNP Power Transistor 2SA980 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Complement to Type 2SC2260 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Другие транзисторы: 2SA970BL, 2SA970GR, 2SA971, 2SA972, 2SA973, 2SA977, 2SA978, 2SA979, 2SA1837, 2SA980, 2SA981, 2SA982, 2SA983, 2SA984, 2SA984D, 2SA984E, 2SA984F
