2SA986. Аналоги и основные параметры
Наименование производителя: 2SA986
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 130 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 130 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 60 MHz
Ёмкость коллекторного перехода (Cc): 250 pf
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: MT-200
Аналоги (замена) для 2SA986
- подборⓘ биполярного транзистора по параметрам
2SA986 даташит
0.1. Size:65K wingshing
2sa986a.pdf 
2SA986A PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -180 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Junction Temperature Tj
9.4. Size:70K wingshing
2sa985.pdf 
2SA985 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC2275 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -7 V Collector Current (DC) IC -1.5 A Collector Dissipation (Tc=25 PC 25 W
9.5. Size:160K jmnic
2sa985 2sa985a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3
9.6. Size:151K jmnic
2sa980 2sa981 2sa982.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CO
9.7. Size:207K inchange semiconductor
2sa985.pdf 
isc Silicon PNP Power Transistor 2SA985 DESCRIPTION Collector-Emitter Breakdown Voltage V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS
9.8. Size:194K inchange semiconductor
2sa981.pdf 
isc Silicon PNP Power Transistor 2SA981 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC2261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.9. Size:131K inchange semiconductor
2sa980 2sa981 2sa982.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SY
9.10. Size:91K inchange semiconductor
2sa985-a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
9.11. Size:194K inchange semiconductor
2sa982.pdf 
isc Silicon PNP Power Transistor 2SA982 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -140V(Min.) (BR)CEO Complement to Type 2SC2262 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
9.12. Size:194K inchange semiconductor
2sa980.pdf 
isc Silicon PNP Power Transistor 2SA980 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Complement to Type 2SC2260 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Другие транзисторы: 2SA984E, 2SA984F, 2SA984K, 2SA984KD, 2SA984KE, 2SA984KF, 2SA985, 2SA985A, BC558, 2SA987, 2SA988, 2SA989, 2SA99, 2SA990, 2SA991, 2SA992, 2SA993
