2SA986
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA986
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 130
V
Tensión colector-emisor (Vce): 130
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 250
pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
MT-200
Búsqueda de reemplazo de transistor bipolar 2SA986
2SA986
Datasheet (PDF)
0.1. Size:65K wingshing
2sa986a.pdf 
2SA986A PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -180 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Junction Temperature Tj
9.4. Size:70K wingshing
2sa985.pdf
2SA985 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC2275ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -7 V Collector Current (DC) IC -1.5 A Collector Dissipation (Tc=25 PC 25 W
9.5. Size:160K jmnic
2sa985 2sa985a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3
9.6. Size:151K jmnic
2sa980 2sa981 2sa982.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO
9.7. Size:207K inchange semiconductor
2sa985.pdf
isc Silicon PNP Power Transistor 2SA985DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS
9.8. Size:194K inchange semiconductor
2sa981.pdf
isc Silicon PNP Power Transistor 2SA981DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC2261Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
9.9. Size:131K inchange semiconductor
2sa980 2sa981 2sa982.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION With TO-3 package Complement to type 2SC2260/2261/2262 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY
9.10. Size:91K inchange semiconductor
2sa985-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION With TO-220 package Complement to type 2SC2275/2275A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22
9.11. Size:194K inchange semiconductor
2sa982.pdf
isc Silicon PNP Power Transistor 2SA982DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -140V(Min.)(BR)CEOComplement to Type 2SC2262Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
9.12. Size:194K inchange semiconductor
2sa980.pdf
isc Silicon PNP Power Transistor 2SA980DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC2260Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
Otros transistores... 2SA984E
, 2SA984F
, 2SA984K
, 2SA984KD
, 2SA984KE
, 2SA984KF
, 2SA985
, 2SA985A
, BC546
, 2SA987
, 2SA988
, 2SA989
, 2SA99
, 2SA990
, 2SA991
, 2SA992
, 2SA993
.
