Биполярный транзистор 2SB108B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB108B
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 0.15 MHz
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: MM5
2SB108B Datasheet (PDF)
2sb1085a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo
2sb1085.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol
2sb1086a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute ma
2sb1086.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maxi
2sb1087.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND
2sb1085a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (
2sb1085.pdf
isc Silicon PNP Power Transistor 2SB1085DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1562Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2sb1086a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3
2sb1086.pdf
isc Silicon PNP Power Transistor 2SB1086DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
2sb1087.pdf
isc Silicon PNP Darlington Power Transistor 2SB1087DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLU
2sb1089.pdf
isc Silicon PNP Power Transistor 2SB1089DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050