2SB108B Specs and Replacement
Type Designator: 2SB108B
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: MM5
- BJT ⓘ Cross-Reference Search
2SB108B datasheet
8.2. Size:157K jmnic
2sb1085a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo... See More ⇒
8.3. Size:157K jmnic
2sb1085.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol ... See More ⇒
8.4. Size:146K jmnic
2sb1086a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute ma... See More ⇒
8.5. Size:146K jmnic
2sb1086.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maxi... See More ⇒
8.6. Size:146K jmnic
2sb1087.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND... See More ⇒
8.7. Size:123K inchange semiconductor
2sb1085a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (... See More ⇒
8.8. Size:216K inchange semiconductor
2sb1085.pdf
isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1562 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.9. Size:115K inchange semiconductor
2sb1086a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 ... See More ⇒
8.10. Size:215K inchange semiconductor
2sb1086.pdf
isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.11. Size:218K inchange semiconductor
2sb1087.pdf
isc Silicon PNP Darlington Power Transistor 2SB1087 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLU... See More ⇒
8.12. Size:218K inchange semiconductor
2sb1089.pdf
isc Silicon PNP Power Transistor 2SB1089 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1567 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM... See More ⇒
Detailed specifications: 2SB1080, 2SB1085, 2SB1085A, 2SB1086, 2SB1087, 2SB1088, 2SB1089, 2SB108A, 2N5401, 2SB109, 2SB1090, 2SB1091, 2SB1092, 2SB1093, 2SB1094, 2SB1095, 2SB1096
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