2SB1119R - аналоги, параметры транзистора - Справочник транзисторов

2SB1119R даташит

7.1. Size:85K sanyo
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7.2. Size:140K secos
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2SB1119/2SD1619 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D D1 A SOT-89 b1 FEATURES b Power dissipation C e e1 P 500mW Tamb=25 CM 1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max -1 A ICM 3.EMITTER A 1.400 1.600 0.055 0.063 Collector-base vol

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2SB1 1 1 9 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package LF Amplifier, Electronic Governor Applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power

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SMD Type Transistors PNP Transistors 2SB1119 Features 1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Complementary to 2SD1619 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -25 V

Другие транзисторы: 2SB1116, 2SB1116A, 2SB1117, 2SB1118, 2SB1118S, 2SB1118T, 2SB1118U, 2SB1119, 8550, 2SB1119S, 2SB1119T, 2SB1119U, 2SB112, 2SB1120, 2SB1120E, 2SB1120F, 2SB1120G