2SB1119R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1119R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
2SB1119R Transistor Equivalent Substitute - Cross-Reference Search
2SB1119R Datasheet (PDF)
2sb1119-1619.pdf
2SB1119/2SD1619PNP Silicon Elektronische BauelementeMedium Power TransistorRoHS Compliant ProductDD1ASOT-89b1FEATURES b Power dissipation Ce e1 P : 500mW Tamb=25 CM1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min Max: -1 AICM3.EMITTERA 1.400 1.600 0.055 0.063 Collector-base vol
2sb1119.pdf
2SB1 1 1 9TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Small Flat Package LF Amplifier, Electronic Governor Applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power
2sb1119.pdf
SMD Type TransistorsPNP Transistors2SB1119 Features1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Complementary to 2SD16190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -25 V
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
