2SB1236 - описание и поиск аналогов

2SB1236 Transistors Power Transistor (-120V, -1.5A) 2SB1236 Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO = -120V) 2) Low collector output capacitance. 2.5 6.8 (Typ. 30pF at VCB = -10V) 3) High transition frequency. (fT = 50MHz) 0.65Max. 4) Complements the 2SD1857. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications Absolute maximum ratin

isc Silicon PNP Power Transistor 2SB1236 DESCRIPTION High breakdown voltage. (BV = -120V) CEO Low collector output capacitance. High transition frequency. (fT = 50MHz) Complement to Type 2SD1857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, voltage regulator, and general purpose power amplifie

Power Transistor ( 160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB1275 5.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.9 4) Complements the 2SD1918 / 2SD1857A. C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) Absolute maximum ratings (Ta =

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

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Medium Power Transistor ( 32V, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1132 2SA1515S VCE(sat) = 0.2V(Typ.) + + 4 0.2 2 0.2 - - 4.5 +0.2 -0.1 (IC / IB = 500mA / 50mA) 1.5 +0.2 + 1.6 0.1 -0.1 - 2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.05 0.4 +0.1 Structure -0.05 + + 0.5 0.1 0.

Medium power transistor( 80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit mm) 1) High breakdown voltage, BVCEO= 80V, and 2SB1189 high current, IC= 0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCE

2SB1183 / 2SB1239 Transistors Power transistor (-40V, -2A) 2SB1183 / 2SB1239 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM CPT3 (1) Base(Gate) RBE 4k (2) Co

Medium Power Transistor ( 32V, 1A) 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SA1515S 2SB1237 + 2.5 0.2 VCE(sat) = 0.2V(Typ.) + + + - 4 0.2 2 0.2 6.8 0.2 - - - (IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05 Epitaxial planar type + PNP silicon transistor 0.5 0.1 - 0.45 +0.15 2.5

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2SB1189 / 2SB1238 Transistors Medium power transistor (-80V, -0.7A) 2SB1189 / 2SB1238 External dimensions (Units mm) Features 1) High breakdown voltage, BVCEO=-80V, and 2SB1189 4.0 high current, IC=-0.7A. 1.0 2.5 0.5 2) Complements the 2SD1767 / 2SD1859. (1) (2) (3) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collecto

JMnic Product Specification Silicon PNP Power Transistors 2SB1230 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD1840 Low collector saturation voltage APPLICATIONS Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti

SMD Type Transistors PNP Transistors 2SB1234 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SD1851 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1858(3DA1858) Features Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V

isc Silicon PNP Power Transistor 2SB1231 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD1841 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general High-current switching app

isc Silicon PNP Power Transistor 2SB1230 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD1840 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general High-current switching app