2SB1236 Datasheet and Replacement

2SB1236TransistorsPower Transistor (-120V, -1.5A)2SB1236 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = -120V)2) Low collector output capacitance.2.56.8 (Typ. 30pF at VCB = -10V)3) High transition frequency. (fT = 50MHz)0.65Max.4) Complements the 2SD1857.0.5(1) (2) (3)2.54 2.541.05 0.45Taping specifications Absolute maximum ratin

isc Silicon PNP Power Transistor 2SB1236DESCRIPTIONHigh breakdown voltage. (BV = -120V)CEOLow collector output capacitance.High transition frequency. (fT = 50MHz)Complement to Type 2SD1857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,voltage regulator, and general purpose power amplifie

Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB12755.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.94) Complements the 2SD1918 / 2SD1857A. C0.50.8Min.1.52.59.5(1) Base(Gate)Absolute maximum ratings (Ta =

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

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Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

2SB1183 / 2SB1239TransistorsPower transistor (-40V, -2A)2SB1183 / 2SB1239 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SB11832) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SD1759 / 2SD1861.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(Gate)RBE 4k(2) Co

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237+2.5 0.2VCE(sat) = 0.2V(Typ.) + + +-4 0.2 2 0.2 6.8 0.2- - -(IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05Epitaxial planar type +PNP silicon transistor 0.5 0.1-0.45 +0.152.5

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2SB1189 / 2SB1238TransistorsMedium power transistor (-80V, -0.7A)2SB1189 / 2SB1238 External dimensions (Units : mm) Features1) High breakdown voltage, BVCEO=-80V, and2SB11894.0high current, IC=-0.7A.1.0 2.5 0.52) Complements the 2SD1767 / 2SD1859.(1)(2)(3) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollecto

JMnic Product Specification Silicon PNP Power Transistors 2SB1230 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD1840 Low collector saturation voltage APPLICATIONS Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti

SMD Type TransistorsPNP Transistors2SB1234SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD18511.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1858(3DA1858) Features: Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

isc Silicon PNP Power Transistor 2SB1231DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1841Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalHigh-current switching app

isc Silicon PNP Power Transistor 2SB1230DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1840Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalHigh-current switching app