2SB156A datasheet, аналоги, основные параметры
Наименование производителя: 2SB156A 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO1
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Аналоги (замена) для 2SB156A
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2SB156A даташит
8.3. Size:64K rohm
2sb1580 2sb1316 2sb1567.pdf 
2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (-100V , -2A) 2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. (2) (3) (1) Base(Gate) (2) Collector(Dr
8.4. Size:1431K rohm
2sb1561.pdf 
2SB1561 Datasheet Middle Power Transistor (-60V/-2A) lOutline l SOT-89 Parameter Value SC-62 VCEO -60V IC -2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=-150mV at IC/IB=-1A/-50mA. 2)Collector-emitter voltage=-60V 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). 4)Complementary NPN Types
8.5. Size:51K rohm
2sb1565.pdf 
2SB1565 Transistors Power Transistor (-60V, -3A) 2SB1565 Features External dimensions (Units mm) 1) Low VCE(sat). (Typ.-0.3V at IC/IB = -2/-0.2A) 2) Excellent DC current gain characteristics. 10.0 4.5 3.2 2.8 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate (1) (2) (3) ( ) (2) Collector Drain (1) (2) (3) (3) Emitter(Source) ROHM TO-
8.6. Size:38K rohm
2sb1568.pdf 
2SB1568 Transistors Transistors 2SD2399 (96-670-B422) (96-825-D422) 300
8.7. Size:37K rohm
2sb1566.pdf 
2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296
8.10. Size:186K jmnic
2sb1560.pdf 
JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION With TO-3PN package Complement to type 2SD2390 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER
8.12. Size:29K sanken-ele
2sb1560.pdf 
E (70 ) B Darlington 2SB1560 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Symbol Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 160 VCB= 160
8.13. Size:553K semtech
st2sb1561u.pdf 
ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T
8.14. Size:435K tysemi
2sb1561-q.pdf 
Product specification 2SB1561-Q SOT-89 Unit mm +0.1 +0.1 4.50-0.1 1.50-0.1 Features +0.1 1.80-0.1 Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V 2 3 Low saturation Voltage typically 1 +0.1 +0.1 +0.1 0.48-0.1 0.53-0.1 0.44-0.1 VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA 1. Base 1. Source 1 Base +0.1 3.00-0.1 2 Collector 2. Collector 2. Drai
8.15. Size:977K kexin
2sb1561.pdf 
SMD Type Transistors PNP Transistors 2SB1561 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V Complements the 2SD2391 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -
8.16. Size:209K inchange semiconductor
2sb1569.pdf 
isc Silicon PNP Power Transistor 2SB1569 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2400 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120
8.17. Size:191K inchange semiconductor
2sb1562.pdf 
isc Silicon PNP Power Transistor 2SB1562 DESCRIPTION High DC Current Gain- h = 300 1000@ (V = -5V , I = -0.5A) FE CE C Low Saturation Voltage- V = -0.5V(TYP)@ (I = -2A, I = -20mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.18. Size:230K inchange semiconductor
2sb1565.pdf 
isc Silicon PNP Power Transistor 2SB1565 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE M
8.19. Size:211K inchange semiconductor
2sb1568.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1568 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD2399 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM
8.20. Size:244K inchange semiconductor
2sb1560.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1560 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2390 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati
8.21. Size:210K inchange semiconductor
2sb1566.pdf 
isc Silicon PNP Power Transistor 2SB1566 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Wide Area of Safe Operation Complement to Type 2SD2395 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amp
8.22. Size:210K inchange semiconductor
2sb1567.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1567 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain Built-in resistor between base and emitter Complement to Type 2SD2398 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power switching applications. ABSOLUTE MAX
Другие транзисторы: 2SB1558, 2SB1558A, 2SB1558B, 2SB1558C, 2SB1559, 2SB156, 2SB1560, 2SB1562, 2SC2073, 2SB157, 2SB1570, 2SB158, 2SB1587, 2SB1588, 2SB159, 2SB16, 2SB160
