2SB330 Specs and Replacement
Type Designator: 2SB330
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Emitter-Base Voltage |Veb|: 50 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO5
2SB330 Substitution
- BJT ⓘ Cross-Reference Search
2SB330 datasheet
isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
Detailed specifications: 2SB323, 2SB324, 2SB325, 2SB326, 2SB327, 2SB328, 2SB329, 2SB33, 8550, 2SB331, 2SB331H, 2SB332, 2SB332H, 2SB333, 2SB333H, 2SB334, 2SB334H
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