All Transistors. 2SB339 Datasheet

 

2SB339 Datasheet and Replacement


   Type Designator: 2SB339
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
 

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2SB339 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
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2SB339

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2SB334 , 2SB334H , 2SB335 , 2SB336 , 2SB337 , 2SB337H , 2SB338 , 2SB338H , D965 , 2SB339H , 2SB34 , 2SB340 , 2SB340H , 2SB341 , 2SB341H , 2SB342 , 2SB343 .

History: AC504 | MMPQ3467 | 2SB353A | RN1105MFV | 2SD5041Q | DTA216 | 2SB30

Keywords - 2SB339 transistor datasheet

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