All Transistors. 2SB339 Datasheet

 

2SB339 Datasheet and Replacement


   Type Designator: 2SB339
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3

 2SB339 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB339 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
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2SB339

isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

Datasheet: 2SB334 , 2SB334H , 2SB335 , 2SB336 , 2SB337 , 2SB337H , 2SB338 , 2SB338H , NJW0281G , 2SB339H , 2SB34 , 2SB340 , 2SB340H , 2SB341 , 2SB341H , 2SB342 , 2SB343 .

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