All Transistors. 2SB339H Datasheet

 

2SB339H Datasheet and Replacement


   Type Designator: 2SB339H
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
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2SB339H Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
 2sb337.pdf pdf_icon

2SB339H

isc Silicon PNP Power Transistors 2SB337DESCRIPTIONLow Collector Saturation Voltage-: V = -0.29V(Typ.) @I = -4ACE(sat) CHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MP3251A | ECG68 | DTL8070 | BUX348CPF | RN2414 | E20235 | 2SD1347T

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