2SB339H Specs and Replacement

Type Designator: 2SB339H

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 50 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 0.125 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO3

 2SB339H Substitution

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2SB339H datasheet

 9.1. Size:210K  inchange semiconductor

 2sb337.pdf pdf_icon

2SB339H

isc Silicon PNP Power Transistors 2SB337 DESCRIPTION Low Collector Saturation Voltage- V = -0.29V(Typ.) @I = -4A CE(sat) C High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

Detailed specifications: 2SB334H, 2SB335, 2SB336, 2SB337, 2SB337H, 2SB338, 2SB338H, 2SB339, D965, 2SB34, 2SB340, 2SB340H, 2SB341, 2SB341H, 2SB342, 2SB343, 2SB345

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