2SB366 Datasheet and Replacement

   Type Designator: 2SB366
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 43 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
     - BJT ⓘ Cross-Reference Search