2SB401 Specs and Replacement
Type Designator: 2SB401
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO5
2SB401 Substitution
- BJT ⓘ Cross-Reference Search
2SB401 datasheet
isc Silicon PNP Power Transistor 2SB407 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: 2SB394, 2SB395, 2SB396, 2SB397, 2SB398, 2SB399, 2SB40, 2SB400, A1013, 2SB402, 2SB403, 2SB404, 2SB405, 2SB405K, 2SB405ST, 2SB406, 2SB407
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