2SB407 Specs and Replacement
Type Designator: 2SB407
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.175 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO3
2SB407 Substitution
- BJT ⓘ Cross-Reference Search
2SB407 datasheet
isc Silicon PNP Power Transistor 2SB407 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -30V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: 2SB401, 2SB402, 2SB403, 2SB404, 2SB405, 2SB405K, 2SB405ST, 2SB406, 2222A, 2SB408, 2SB409, 2SB41, 2SB410, 2SB410AF, 2SB410S, 2SB411, 2SB411AF
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