2SB407 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB407
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.175 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3
2SB407 Transistor Equivalent Substitute - Cross-Reference Search
2SB407 Datasheet (PDF)
..1. Size:203K inchange semiconductor
2sb407.pdf
2sb407.pdf
isc Silicon PNP Power Transistor 2SB407DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N3052
