All Transistors. 2SB407 Datasheet

 

2SB407 Datasheet and Replacement


   Type Designator: 2SB407
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
 

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2SB407 Datasheet (PDF)

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2SB407

isc Silicon PNP Power Transistor 2SB407DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATI

Datasheet: 2SB401 , 2SB402 , 2SB403 , 2SB404 , 2SB405 , 2SB405K , 2SB405ST , 2SB406 , SS8050 , 2SB408 , 2SB409 , 2SB41 , 2SB410 , 2SB410AF , 2SB410S , 2SB411 , 2SB411AF .

History: KSA542R | BU508AFI | BF393W2 | 2SC1251 | MMCM4261 | 2SC2658 | TIP32A

Keywords - 2SB407 transistor datasheet

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