2SB464 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB464
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2SB464 Transistor Equivalent Substitute - Cross-Reference Search
2SB464 Datasheet (PDF)
9.1. Size:208K inchange semiconductor
2sb468.pdf
2sb468.pdf
isc Silicon PNP Power Transistor 2SB468DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -90V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.7V(Max.) @I = -3ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection power outputapplications.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
