All Transistors. 2SB464 Datasheet

 

2SB464 Datasheet and Replacement


   Type Designator: 2SB464
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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2SB464 Datasheet (PDF)

 9.1. Size:208K  inchange semiconductor
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2SB464

isc Silicon PNP Power Transistor 2SB468DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -90V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.7V(Max.) @I = -3ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection power outputapplications.

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3544 | MMBT4122 | 2N1015B | 2N1963

Keywords - 2SB464 transistor datasheet

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