2SB464 Specs and Replacement

Type Designator: 2SB464

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 0.7 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 2SB464 Substitution

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2SB464 datasheet

 9.1. Size:208K  inchange semiconductor

 2sb468.pdf pdf_icon

2SB464

isc Silicon PNP Power Transistor 2SB468 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection power output applications.... See More ⇒

Detailed specifications: 2SB460A, 2SB460B, 2SB461, 2SB462, 2SB463, 2SB463B, 2SB463R, 2SB463Y, D209L, 2SB465, 2SB466, 2SB467, 2SB468, 2SB468A, 2SB47, 2SB470, 2SB471

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