All Transistors. 2SB467 Datasheet

 

2SB467 Datasheet and Replacement


   Type Designator: 2SB467
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 0.15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO66
 

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2SB467 Datasheet (PDF)

 9.1. Size:208K  inchange semiconductor
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2SB467

isc Silicon PNP Power Transistor 2SB468DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -90V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.7V(Max.) @I = -3ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection power outputapplications.

Datasheet: 2SB462 , 2SB463 , 2SB463B , 2SB463R , 2SB463Y , 2SB464 , 2SB465 , 2SB466 , 2SC2383Y , 2SB468 , 2SB468A , 2SB47 , 2SB470 , 2SB471 , 2SB471A , 2SB471B , 2SB472 .

Keywords - 2SB467 transistor datasheet

 2SB467 cross reference
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