2SB467 Specs and Replacement
Type Designator: 2SB467
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO66
2SB467 Substitution
- BJT ⓘ Cross-Reference Search
2SB467 datasheet
isc Silicon PNP Power Transistor 2SB468 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.7V(Max.) @I = -3A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection power output applications.... See More ⇒
Detailed specifications: 2SB462, 2SB463, 2SB463B, 2SB463R, 2SB463Y, 2SB464, 2SB465, 2SB466, 2SC5198, 2SB468, 2SB468A, 2SB47, 2SB470, 2SB471, 2SB471A, 2SB471B, 2SB472
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