2SB520 Specs and Replacement

Type Designator: 2SB520

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO3

 2SB520 Substitution

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2SB520 datasheet

 ..1. Size:178K  inchange semiconductor

 2sb520.pdf pdf_icon

2SB520

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB520 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -7A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a... See More ⇒

 9.1. Size:183K  inchange semiconductor

 2sb521.pdf pdf_icon

2SB520

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB521 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

 9.2. Size:167K  inchange semiconductor

 2sb522.pdf pdf_icon

2SB520

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB522 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

 9.3. Size:217K  inchange semiconductor

 2sb526.pdf pdf_icon

2SB520

isc Silicon PNP Power Transistor 2SB526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

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Detailed specifications: 2SB516, 2SB518, 2SB518-1, 2SB518-2, 2SB519, 2SB519-1, 2SB519-2, 2SB52, D880, 2SB520-1, 2SB520-2, 2SB521, 2SB521-1, 2SB521-2, 2SB522, 2SB522-1, 2SB522-2

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