All Transistors. 2SB540 Datasheet

 

2SB540 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB540
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 13 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO3

 2SB540 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB540 Datasheet (PDF)

 9.1. Size:445K  sanyo
2sb544.pdf

2SB540
2SB540

 9.2. Size:134K  nec
2sb548 2sb549 2sd414 2sd415.pdf

2SB540
2SB540

DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiatorsABSOLUTE MAXIMUM RATINGS (Ta = 25

 9.4. Size:108K  mospec
2sb546 2sb546a.pdf

2SB540
2SB540

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 9.5. Size:159K  jmnic
2sb548.pdf

2SB540
2SB540

JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 9.6. Size:251K  jmnic
2sb546a.pdf

2SB540
2SB540

JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simpli

 9.7. Size:199K  jmnic
2sb546.pdf

2SB540
2SB540

JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi

 9.8. Size:181K  inchange semiconductor
2sb548.pdf

2SB540
2SB540

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB548DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageComplement to Type 2SD414Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 9.9. Size:220K  inchange semiconductor
2sb546a.pdf

2SB540
2SB540

isc Silicon PNP Power Transistor 2SB546ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD401AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical deflectionof complement

 9.10. Size:185K  inchange semiconductor
2sb547.pdf

2SB540
2SB540

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB547DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD402Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical def

 9.11. Size:213K  inchange semiconductor
2sb541.pdf

2SB540
2SB540

isc Silicon PNP Power Transistors 2SB541DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for output sta

 9.12. Size:185K  inchange semiconductor
2sb549.pdf

2SB540
2SB540

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB549DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOWith TO-126 packageComplement to Type 2SD415Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 9.13. Size:215K  inchange semiconductor
2sb546.pdf

2SB540
2SB540

isc Silicon PNP Power Transistor 2SB546DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD401Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical deflectionof complementar

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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