2SB587 Specs and Replacement

Type Designator: 2SB587

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO3

 2SB587 Substitution

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2SB587 datasheet

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Detailed specifications: 2SB58, 2SB580, 2SB581, 2SB582, 2SB583, 2SB584, 2SB585, 2SB586, NJW0281G, 2SB588, 2SB589, 2SB59, 2SB595, 2SB595O, 2SB595R, 2SB595Y, 2SB596

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