2SB595R Specs and Replacement
Type Designator: 2SB595R
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 270 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SB595R Substitution
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2SB595R datasheet
2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 40 W Ju... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage VCEO=-100V Low collector saturation volage VCE(sat)=-2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emi... See More ⇒
isc Silicon PNP Power Transistor 2SB595 DESCRIPTION Low Collector Saturation Voltage V = -2.0(V)(Max)@I = -4A CE(sat) C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Complement to Type 2SD525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 30W high-fidelity aud... See More ⇒
Detailed specifications: 2SB585, 2SB586, 2SB587, 2SB588, 2SB589, 2SB59, 2SB595, 2SB595O, 2SA1015, 2SB595Y, 2SB596, 2SB596O, 2SB596R, 2SB596Y, 2SB598, 2SB598D, 2SB598E
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