2SB608 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB608
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
2SB608 Transistor Equivalent Substitute - Cross-Reference Search
2SB608 Datasheet (PDF)
2sb608.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB608DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications .
2sb601.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High-DC current gain due to Darlington connection Low collector saturation voltage Low collector cutoff current Ideal for use in direct drive from IC output for magnet drivers s
2sb601.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB601 DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=
2sb600.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SD555 APPLICATIONS For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME
2sb604.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB604DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5(Max.) @I = -4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicat
2sb601.pdf
isc Silicon PNP Darlington Power Transistor 2SB601DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
2sb609.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB609DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationWith TO-66 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio fre
2sb600.pdf
isc Silicon PNP Power Transistors 2SB600DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 200W(Max)@T =25C CComplement to Type 2SD555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
