2SB608 Todos los transistores

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB608 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -180V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -0.5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications .

DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High-DC current gain due to Darlington connection Low collector saturation voltage Low collector cutoff current Ideal for use in direct drive from IC output for magnet drivers s

JMnic Product Specification Silicon PNP Power Transistors 2SB601 DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=

JMnic Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SD555 APPLICATIONS For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAME

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB604 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -70V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.5(Max.) @I = -4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applicat

isc Silicon PNP Darlington Power Transistor 2SB601 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB609 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -80V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C Wide area of safe operation With TO-66 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio fre

isc Silicon PNP Power Transistors 2SB600 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation- P = 200W(Max)@T =25 C C Complement to Type 2SD555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a