2SB631E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB631E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 55 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
2SB631E Transistor Equivalent Substitute - Cross-Reference Search
2SB631E Datasheet (PDF)
2sb631 2sb631k.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
2sb631k 3ca631k.pdf
2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme
2sb631.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB631DESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicati
2sb631 2sb631k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto
2sb631-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto
2sb631k.pdf
isc Silicon PNP Power Transistor 2SB631KDESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
