All Transistors. 2SB631KD Datasheet

 

2SB631KD Datasheet and Replacement


   Type Designator: 2SB631KD
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 55 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 2SB631KD Substitution

   - BJT ⓘ Cross-Reference Search

   

2SB631KD Datasheet (PDF)

 7.1. Size:220K  jmnic
 2sb631 2sb631k.pdf pdf_icon

2SB631KD

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

 7.2. Size:358K  lzg
 2sb631k 3ca631k.pdf pdf_icon

2SB631KD

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme

 7.3. Size:178K  inchange semiconductor
 2sb631 2sb631k.pdf pdf_icon

2SB631KD

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto

 7.4. Size:213K  inchange semiconductor
 2sb631k.pdf pdf_icon

2SB631KD

isc Silicon PNP Power Transistor 2SB631KDESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM

SHOW MORE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: HEPS0009 | 2SD1245 | KC817-16 | JO1006 | KSC184V | BUL53ASMD | 2SC2301

Keywords - 2SB631KD transistor datasheet

 2SB631KD cross reference
 2SB631KD equivalent finder
 2SB631KD lookup
 2SB631KD substitution
 2SB631KD replacement

 

 
Back to Top

 


 
.