2SB632E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB632E
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
2SB632E Transistor Equivalent Substitute - Cross-Reference Search
2SB632E Datasheet (PDF)
2sb632 2sb632k.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max
2sb632-k.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 B
2sb632.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB632DESCRIPTIONHigh Collector Current-I =-2.0ACHigh Collector-Emitter Breakdown Voltage-: V =-25V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency power amplifier applicationsABSOLUTE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
