2SB633E Specs and Replacement
Type Designator: 2SB633E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO220
2SB633E Substitution
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2SB633E datasheet
Ordering number ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter Spec... See More ⇒
JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage VCEO=-85V High current IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=2... See More ⇒
isc Silicon PNP Power Transistor 2SB633 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -85V(Min) (BR)CEO Complement to Type 2SD613 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency 25 35 watts output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -1... See More ⇒
Detailed specifications: 2SB632F, 2SB632K, 2SB632KD, 2SB632KE, 2SB632KF, 2SB633, 2SB633C, 2SB633D, 8550, 2SB633F, 2SB633P, 2SB634, 2SB635, 2SB636, 2SB637, 2SB637K, 2SB638
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