All Transistors. 2SB633E Datasheet

 

2SB633E Datasheet and Replacement


   Type Designator: 2SB633E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
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2SB633E Datasheet (PDF)

 8.1. Size:27K  sanyo
 2sb633p 2sd613p.pdf pdf_icon

2SB633E

Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec

 8.2. Size:160K  sanyo
 2sb633.pdf pdf_icon

2SB633E

 8.3. Size:199K  jmnic
 2sb633.pdf pdf_icon

2SB633E

JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage :VCEO=-85V High current :IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=2

 8.4. Size:218K  inchange semiconductor
 2sb633.pdf pdf_icon

2SB633E

isc Silicon PNP Power Transistor 2SB633DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -85V(Min)(BR)CEOComplement to Type 2SD613Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1

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History: 2SA843 | 2SB260 | MMBT4122 | 2SB464 | 2N1866 | 2SA1051A | 2N1963

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