2SB649 PDF and Equivalents Search

 

2SB649 Specs and Replacement


   Type Designator: 2SB649
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 2SB649 Substitution

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2SB649 datasheet

 ..1. Size:293K  utc
2sb649 2sb649a.pdf pdf_icon

2SB649

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3... See More ⇒

 ..2. Size:280K  jiangsu
2sb649 2sb649a.pdf pdf_icon

2SB649

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit... See More ⇒

 ..3. Size:199K  jmnic
2sb649 2sb649a.pdf pdf_icon

2SB649

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t... See More ⇒

 ..4. Size:273K  wietron
2sb649.pdf pdf_icon

2SB649

2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SB649 2SB649A Unit VCBO -180 V Collector-Emitter Voltage VCEO -120 -160 V Collector-Base Voltage VEBO Emitter-Base Voltage 6.0 V Collector Current IC -1.5 A PD 1.0 W Power Disspation Tj +150 C Junction Temp... See More ⇒

Detailed specifications: 2SB647A , 2SB648 , 2SB648A , 2SB648AB , 2SB648AC , 2SB648B , 2SB648C , 2SB648D , 2SC828 , 2SB649A , 2SB649AB , 2SB649AC , 2SB649B , 2SB649C , 2SB649D , 2SB65 , 2SB650 .

History: 2SB1401 | 2SB1272Q | HBD681 | 2SC3231

Keywords - 2SB649 pdf specs

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