2SB649 Datasheet. Specs and Replacement

Type Designator: 2SB649  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

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2SB649 datasheet

 ..1. Size:293K  utc

2sb649 2sb649a.pdf pdf_icon

2SB649

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3... See More ⇒

 ..2. Size:280K  jiangsu

2sb649 2sb649a.pdf pdf_icon

2SB649

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit... See More ⇒

 ..3. Size:199K  jmnic

2sb649 2sb649a.pdf pdf_icon

2SB649

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t... See More ⇒

 ..4. Size:273K  wietron

2sb649.pdf pdf_icon

2SB649

2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SB649 2SB649A Unit VCBO -180 V Collector-Emitter Voltage VCEO -120 -160 V Collector-Base Voltage VEBO Emitter-Base Voltage 6.0 V Collector Current IC -1.5 A PD 1.0 W Power Disspation Tj +150 C Junction Temp... See More ⇒

Detailed specifications: 2SB647A, 2SB648, 2SB648A, 2SB648AB, 2SB648AC, 2SB648B, 2SB648C, 2SB648D, 2SC828, 2SB649A, 2SB649AB, 2SB649AC, 2SB649B, 2SB649C, 2SB649D, 2SB65, 2SB650

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