2SB649 Specs and Replacement
Type Designator: 2SB649
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Electrical Characteristics
Transition Frequency (ft): 140
MHz
Collector Capacitance (Cc): 27
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO126
-
BJT ⓘ Cross-Reference Search
2SB649 datasheet
..1. Size:293K utc
2sb649 2sb649a.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3... See More ⇒
..2. Size:280K jiangsu
2sb649 2sb649a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit... See More ⇒
..3. Size:199K jmnic
2sb649 2sb649a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t... See More ⇒
..4. Size:273K wietron
2sb649.pdf 

2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SB649 2SB649A Unit VCBO -180 V Collector-Emitter Voltage VCEO -120 -160 V Collector-Base Voltage VEBO Emitter-Base Voltage 6.0 V Collector Current IC -1.5 A PD 1.0 W Power Disspation Tj +150 C Junction Temp... See More ⇒
..5. Size:1004K blue-rocket-elect
2sb649 2sb649a.pdf 

2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A) Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin... See More ⇒
..6. Size:212K inchange semiconductor
2sb649.pdf 

isc Silicon PNP Power Transistor 2SB649 DESCRIPTION High Collector Current-I =-1.5A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RA... See More ⇒
0.1. Size:35K hitachi
2sb649a.pdf 

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base v... See More ⇒
0.2. Size:253K secos
2sb649-649a.pdf 

2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 3.2 0.2 8.0 0.2 FEATURES 2.0 0.2 4.14 0.1 O2.8 0.1 O3.2 0.1 Power smplifier applications 11.0 0.2 1.4 0.1 1 2 3 Power dissipation PCM 1 W Tamb=25 1.27 0.1 Collector current 15.3 ... See More ⇒
0.3. Size:201K lge
2sb649a-2sb649.pdf 

2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.500 7.400 2.900 1.100 Symbol Parameter Value Units 7.800 1.500 VCBO Collector-Base Voltage -180 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 3... See More ⇒
0.4. Size:194K lge
2sb649-2sb649a to-126c.pdf 

2SB649/2SB649A TO-126C Transistor (PNP) TO-126C 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V 3.000 7.800 3.400 8.200 1.800 VCEO Collector-Emitter Voltage 2.200 4.040 2SB649 -120 V ... See More ⇒
0.5. Size:873K blue-rocket-elect
2sb649ta.pdf 

2SB649TA(BR3CA649TA) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SD669TA(BR3DA669TA) Complementary pair with 2SD669TA(BR3DA669TA). / Applications Low frequency power amplifier. / Equivalen... See More ⇒
0.6. Size:900K blue-rocket-elect
2sb649ad.pdf 

2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni... See More ⇒
0.7. Size:162K nell
2sb649am.pdf 

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter... See More ⇒
0.8. Size:162K nell
2sb649am-a.pdf 

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter... See More ⇒
0.9. Size:380K lzg
2sb649-a 3ca649-a.pdf 

2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SD669(3DA669)/2SD669A(3DA669A) Features Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -180 V CBO... See More ⇒
0.10. Size:81K inchange semiconductor
2sb649a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME... See More ⇒
Detailed specifications: 2SB647A
, 2SB648
, 2SB648A
, 2SB648AB
, 2SB648AC
, 2SB648B
, 2SB648C
, 2SB648D
, 2SC828
, 2SB649A
, 2SB649AB
, 2SB649AC
, 2SB649B
, 2SB649C
, 2SB649D
, 2SB65
, 2SB650
.
History: 2SB1401
| 2SB1272Q
| HBD681
| 2SC3231
Keywords - 2SB649 pdf specs
2SB649 cross reference
2SB649 equivalent finder
2SB649 pdf lookup
2SB649 substitution
2SB649 replacement