2SB66H Datasheet. Specs and Replacement
Type Designator: 2SB66H 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.3 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO1
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2SB66H datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applic... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -0.5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching app... See More ⇒
Detailed specifications: 2SB655A, 2SB656, 2SB656A, 2SB66, 2SB668, 2SB668A, 2SB669, 2SB669A, 2N5401, 2SB67, 2SB670, 2SB670A, 2SB671, 2SB671A, 2SB672, 2SB672A, 2SB673
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