2SB670 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB670
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO3
2SB670 Transistor Equivalent Substitute - Cross-Reference Search
2SB670 Datasheet (PDF)
2sb676.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3
2sb679.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 DESCRIPTION High Power Dissipation- : PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITV
2sb676.pdf
isc Silicon PNP Darlington Power Transistor 2SB676DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
2sb674.pdf
isc Silicon PNP Darlington Power Transistor 2SB674DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SD634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive applica
2sb673.pdf
isc Silicon PNP Darlington Power Transistor 2SB673DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSH
2sb675.pdf
isc Silicon PNP Darlington Power Transistor 2SB675DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SD635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive applica
2sb677.pdf
isc Silicon PNP Darlington Power Transistor 2SB677DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB678 | MJB44H11 | D882S-Q
