All Transistors. 2SB681 Equivalents Search

isc Silicon PNP Power Transistor 2SB681 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF power amplifier use. Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -120 V Collector-Emi... See More ⇒

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2SB688 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30 35W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45 50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Abs... See More ⇒

PNP PNP Epitaxial Silicon Transistor R NPN 2SB688 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltage V =110V (min) CEO CEO V =180V (min) V =180V (min) CEO CEO 2SD718 Complementary to 2S... See More ⇒

SEMICONDUCTOR 2SB688 TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V... See More ⇒

2SB688(3CA688) PNP /SILICON PNP TRANSISTOR Purpose Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut... See More ⇒

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD718 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB680 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min.) Complement to Type 2SC1080 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC... See More ⇒

isc Silicon PNP Power Transistor 2SB689 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATING... See More ⇒

isc Silicon PNP Power Transistor 2SB686 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD716 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 30 35W high-fidelity audio frequency amplifier output stage. ABSOLUTE... See More ⇒

isc Silicon PNP Power Transistor 2SB683 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

isc Silicon PNP Power Transistor 2SB682 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

isc Silicon PNP Power Transistor 2SB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicat... See More ⇒