2SB688O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB688O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 280 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO218
2SB688O Transistor Equivalent Substitute - Cross-Reference Search
2SB688O Datasheet (PDF)
2sb688r 2sb688o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
2sb688.pdf
UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO -120 VCollector-Emi
2sb688.pdf
2SB688 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SD716ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collect
2sb688.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB688 DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbs
2sb688.pdf
PNP PNP Epitaxial Silicon Transistor RNPN 2SB688 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltageV =110V (min) CEO CEOV =180V (min) V =180V (min) CEO CEO 2SD718 Complementary to 2S
2sb688 to3p.pdf
SEMICONDUCTOR2SB688TECHNICAL DATAPNP EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATION FEATURES* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1TO-3P1: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number: 2SB688LABSOLUTE MAXIMUM RATINGS(Ta=25)PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V
2sb688 3ca688.pdf
2SB688(3CA688) PNP /SILICON PNP TRANSISTOR : Purpose: Designed for use in general-purpose amplifier and switching application. 45-50W 2SD718(3DA718) Features: Recommend for 45-50W audio frequency amplifier output stage, Complementary to 2SD718(3DA718). /Absolut
2sb688.pdf
isc Silicon PNP Power Transistor 2SB688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD718Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicat
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
