All Transistors. 2SB699 Datasheet

 

2SB699 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB699

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: XM20

2SB699 Transistor Equivalent Substitute - Cross-Reference Search

 

2SB699 Datasheet (PDF)

5.1. 2sb697 2sb697k.pdf Size:136K _jmnic

2SB699
2SB699

JMnic Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION ·With TO-3 package ·Complement to type 2SD733/733K ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)

5.2. 2sb697-k.pdf Size:123K _inchange_semiconductor

2SB699
2SB699

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION ·With TO-3 package ·Complement to type 2SD733/733K ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifie

5.3. 2sb695.pdf Size:226K _inchange_semiconductor

2SB699
2SB699

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB695 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD731 APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

5.4. 2sb696.pdf Size:206K _inchange_semiconductor

2SB699
2SB699

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB696 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD732 APPLICATIONS ·Designed for AF power amplifier applications. ·Recommended for output stage of 60W power amplifier. ABSOLUTE MAXIM

5.5. 2sb691.pdf Size:226K _inchange_semiconductor

2SB699
2SB699

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB691 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD727 APPLICATIONS ·Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBO

Datasheet: 2SB696K , 2SB697 , 2SB697K , 2SB698 , 2SB698D , 2SB698E , 2SB698F , 2SB698G , SS8050 , 2SB70 , 2SB700 , 2SB700A , 2SB701 , 2SB702 , 2SB702A , 2SB703 , 2SB703A .

 


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