2SB710 Datasheet and Replacement

Transistors2SB0710, 2SB0710ASilicon PNP epitaxial planer typeUnit: mm0.40+0.10For general amplification 0.050.16+0.100.063Complementary to 2SD0602 and 2SD0602A Features Large collector current IC1 2 Mini type package, allowing downsizing of the equipment and(0.95) (0.95)automatic insertion through the tape packing and the magazine1.90.12.90+0.20

Transistor2SB710, 2SB710ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD602 and 2SD602A+0.22.8 0.3Features+0.250.65 0.15 1.5 0.05 0.65 0.15 Large collector current IC. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1packing.3Absolute Maximum

SMD Type TransistorsPNP Transistors2SB710SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.5A1 2 Collector Emitter Voltage VCEO=-25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to 2SD6021.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsPNP Transistors2SB710ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Large collector current IC Complimentary to 2SD602A.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Volt

2SB715, 2SB716, 2SB716ASilicon PNP EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SB715, 2SB716, 2SB716AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SB715 2SB716 2SB716A UnitCollector to base voltage VCBO 100 120 140 VCollector to em

JMnic Product Specification Silicon PNP Power Transistors 2SB713 DESCRIPTION With TO-3PN package Wide area of safe operation Excellent good linearity of hFE APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(T

CHENMKO ENTERPRISE CO.,LTD2SB717GPSURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 AmpereFEATURE* Small flat package. (SC-62/SOT-89)* Peak pulse current : 10A* Extremely low saturation voltageSC-62/SOT-89* PC= 2.0 W* Extremely low equivalent On-resistanceCONSTRUCTION4.6MAX. 1.6MAX.* PNP Switching Transistor 1.7MAX. 0.4+0.05+0.080.45-0.05+0.

isc Silicon PNP Power Transistor 2SB719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD759Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=2

isc Silicon PNP Power Transistor 2SB713DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SD751Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifier use.ABSOLUTE MAXIMUM RATINGS(T =25)