2SB711 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB711
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
2SB711 Transistor Equivalent Substitute - Cross-Reference Search
2SB711 Datasheet (PDF)
2sb710.pdf
Transistors2SB0710, 2SB0710ASilicon PNP epitaxial planer typeUnit: mm0.40+0.10For general amplification 0.050.16+0.100.063Complementary to 2SD0602 and 2SD0602A Features Large collector current IC1 2 Mini type package, allowing downsizing of the equipment and(0.95) (0.95)automatic insertion through the tape packing and the magazine1.90.12.90+0.20
2sb710 e.pdf
Transistor2SB710, 2SB710ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD602 and 2SD602A+0.22.8 0.3Features+0.250.65 0.15 1.5 0.05 0.65 0.15 Large collector current IC. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1packing.3Absolute Maximum
2sb715 2sb716.pdf
2SB715, 2SB716, 2SB716ASilicon PNP EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SD755, 2SD756 and 2SD756AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SB715, 2SB716, 2SB716AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SB715 2SB716 2SB716A UnitCollector to base voltage VCBO 100 120 140 VCollector to em
2sb713.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB713 DESCRIPTION With TO-3PN package Wide area of safe operation Excellent good linearity of hFE APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(T
2sb710.pdf
SMD Type TransistorsPNP Transistors2SB710SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.5A1 2 Collector Emitter Voltage VCEO=-25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to 2SD6021.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sb710a.pdf
SMD Type TransistorsPNP Transistors2SB710ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Large collector current IC Complimentary to 2SD602A.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Volt
2sb717gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SB717GPSURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 AmpereFEATURE* Small flat package. (SC-62/SOT-89)* Peak pulse current : 10A* Extremely low saturation voltageSC-62/SOT-89* PC= 2.0 W* Extremely low equivalent On-resistanceCONSTRUCTION4.6MAX. 1.6MAX.* PNP Switching Transistor 1.7MAX. 0.4+0.05+0.080.45-0.05+0.
2sb719.pdf
isc Silicon PNP Power Transistor 2SB719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD759Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=2
2sb713.pdf
isc Silicon PNP Power Transistor 2SB713DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SD751Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifier use.ABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .